Datasheet > AM28F010A-200EI

AM28F010A-200EI

更新时间： 2024-11-07 23:00:27

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	439K
描述
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

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AM28F010A-200EI 数据手册

FINAL

Am28F010A

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

■ Latch-up protected to 100 mA from

DISTINCTIVE CHARACTERISTICS

–1 V to V_CC+1 V

■ High performance

■ Embedded Erase Electrical Bulk Chip Erase

— Access times as fast as 70 ns

■ CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— 5 seconds typical chip erase, including

pre-programming

■ Embedded Program

— 14 µs typical byte program, including time-out

— 4 seconds typical chip program

■ Compatible with JEDEC-standard byte-wide

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

32-pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

■ On-chip address and data latches

— 32-pin TSOP

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5%

■ Embedded algorithms for completely self-timed

write/erase operations

within this family that offer Embedded Algorithms use

the same command set. This offers designers the flexi-

bility to retain the same device footprint and command

set, at any density between 256 Kbits and 2 Mbits.

GENERAL DESCRIPTION

The Am28F010A is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash memo-

ries offer the most cost-effective and reliable read/write

non-volatile random access memory. The Am28F010A

is packaged in 32-pin PDIP, PLCC, and TSOP versions.

It is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F010A

is erased when shipped from the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles. The

AMD cell is designed to optimize the erase and program-

ming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal elec-

tric fields for erase and programming operations pro-

duces reliable cycling. The Am28F010A uses a

12.0±5% V_PPinput to perform the erase and program-

ming functions.

The standard Am28F010A offers access times of as fast

as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus contention,

the device has separate chip enable (CE#) and output

enable (OE#) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on address

and data pins from –1 V to V_CC+1 V.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010A uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

AMD’s Flash technology combines years of EPROM and

EEPROM experience to produce the highest levels of

quality, reliability, and cost effectiveness. The

Am28F010A electrically erases all bits simultaneously

using Fowler-Nordheim tunneling. The bytes are

programmed one byte at a time using the EPROM pro-

gramming mechanism of hot electron injection.

The Am28F010A is compatible with the AMD

Am28F256A, Am28F512A, and Am28F020A Flash

memories. All devices in the Am28Fxxx family follow the

JEDEC 32-pin pinout standard. In addition, all devices

Publication# 16778 Rev: D Amendment/+2

Issue Date: May 1998

12 3 4 5 6 7...35

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与AM28F010A-200EI相关器件

型号	品牌	获取价格	描述	数据表
AM28F010A-200EIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200JC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200JCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200JE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

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