Datasheet > AM27C512-255DEB

AM27C512-255DEB

更新时间： 2024-02-25 23:21:14

品牌	Logo	应用领域
超微 - AMD		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
12页	162K
描述
512 Kilobit (64 K x 8-Bit) CMOS EPROM

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技术参数
数据手册

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AM27C512-255DEB 技术参数

生命周期：	Contact Manufacturer	包装说明：	DIP,
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.76	Is Samacsys：	N
最长访问时间：	250 ns	JESD-30 代码：	R-PDIP-T28
JESD-609代码：	e0	长度：	37.084 mm
内存密度：	524288 bit	内存集成电路类型：	OTP ROM
内存宽度：	8	功能数量：	1
端子数量：	28	字数：	65536 words
字数代码：	64000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	并行/串行：	PARALLEL
座面最大高度：	5.715 mm	最大供电电压 (Vsup)：	5.25 V
最小供电电压 (Vsup)：	4.75 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	宽度：	15.24 mm
Base Number Matches：	1

AM27C512-255DEB 数据手册

FINAL

Am27C512

512 Kilobit (64 K x 8-Bit) CMOS EPROM

DISTINCTIVE CHARACTERISTICS

■ Fast access time

■ Latch-up protected to 100 mA from –1 V to

V_CC+ 1 V

— Speed options as fast as 55 ns

■ Low power consumption

■ High noise immunity

■ Versatile features for simple interfacing

— Both CMOS and TTL input/output compatibility

— Two line control functions

— 20 µA typical CMOS standby current

■ JEDEC-approved pinout

■ Single +5 V power supply

■ Standard 28-pin DIP, PDIP, and 32-pin PLCC

■ ±10% power supply tolerance standard

■ 100% Flashrite™ programming

— Typical programming time of 8 seconds

packages

GENERAL DESCRIPTION

The Am27C512 is a 512-Kbit, ultraviolet erasable pro-

grammable read-only memory. It is organized as 64K

words by 8 bits per word, operates from a single +5 V

supply, has a static standby mode, and features fast

single address location programming. Products are

available in windowed ceramic DIP packages, as well

as plastic one time programmable (OTP) PDIP and

PLCC packages.

thus eliminating bus contention in a multiple bus micro-

processor system.

AMD’s CMOS process technology provides high

speed, low power, and high noise immunity. Typical

power consumption is only 80 mW in active mode, and

100 µW in standby mode.

All signals are TTL levels, including programming sig-

nals. Bit locations may be programmed singly, in

blocks, or at random. The device supports AMD’s

Flashrite programming algorithm (100 µs pulses), re-

sulting in a typical programming time of 8 seconds.

Data can be typically accessed in less than 55 ns, al-

lowing high-performance microprocessors to operate

without any WAIT states. The device offers separate

Output Enable (OE#) and Chip Enable (CE#) controls,

BLOCK DIAGRAM

Data Outputs

DQ0–DQ7

Output Enable

Chip Enable

and

OE#/V

Output

Buffers

CE#

Prog Logic

Gating

Decoder

A0–A15

Address

Inputs

524,288

Bit Cell

Matrix

Decoder

08140I-1

Publication# 08140 Rev: I Amendment/0

Issue Date: May 1998

12 3 4 5 6 7...12

中文翻译

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与AM27C512-255DEB相关器件

型号	品牌	获取价格	描述	数据表
AM27C512-255DI	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS EPROM
AM27C512-255DI	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-255DI	SPANSION	获取价格	UVPROM, 64KX8, 250ns, CMOS, CDIP28, CERAMIC, DIP-28
AM27C512-255DIB	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-255DIB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS EPROM
AM27C512-255EC	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-255EI	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-255JC	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-255JC	SPANSION	获取价格	OTP ROM, 64KX8, 250ns, CMOS, PQCC32, PLASTIC, LCC-32
AM27C512-255JI	ROCHESTER	获取价格	512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns

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