Datasheet > AM27C040-90JE

AM27C040-90JE

更新时间： 2024-11-17 22:56:31

品牌	Logo	应用领域
超微 - AMD		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	168K
描述
4 Megabit (512 K x 8-Bit) CMOS EPROM

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数据手册

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AM27C040-90JE 数据手册

FINAL

Am27C040

4 Megabit (512 K x 8-Bit) CMOS EPROM

DISTINCTIVE CHARACTERISTICS

■ Fast access time

■ Single +5 V power supply

— Available in speed options as fast as 90 ns

■ Low power consumption

■ ±10% power supply tolerance standard

■ 100% Flashrite™ programming

— Typical programming time of 1 minute

— <10 µA typical CMOS standby current

■ Latch-up protected to 100 mA from –1 V to

■ JEDEC-approved pinout

V_CC+ 1 V

— Plug-in upgrade for 1 Mbit and 2 Mbit EPROMs

— Easy upgrade from 28-pin JEDEC EPROMs

■ High noise immunity

■ Compact 32-pin DIP, PDIP, PLCC packages

GENERAL DESCRIPTION

The Am27C040 is a 4 Mbit ultraviolet erasable pro-

grammable read-only memory. It is organized as 512K

bytes, operates from a single +5 V supply, has a static

standby mode, and features fast single address loca-

tion programming. The device is available in windowed

ceramic DIP packages and plastic one-time program-

mable (OTP) packages.

thus eliminating bus contention in a multiple bus micro-

processor system.

AMD’s CMOS process technology provides high

speed, low power, and high noise immunity. Typical

power consumption is only 100 mW in active mode,

and 50 µW in standby mode.

All signals are TTL levels, including programming sig-

nals. Bit locations may be programmed singly, in

blocks, or at random. The device supports AMD’s

Flashrite programming algorithm (100 µs pulses) re-

sulting in typical programming time of 1 minute.

Data can be typically accessed in less than 90 ns, al-

lowing high-performance microprocessors to operate

without any WAIT states. The device offers separate

Output Enable (OE#) and Chip Enable (CE#) controls,

BLOCK DIAGRAM

Data Outputs

DQ0–DQ7

Output Enable

Chip Enable

and

OE#

Output

Buffers

Prog Logic

CE#/PGM#

Gating

Decoder

A0–A18

Address

Inputs

4,194,304-Bit

Cell Matrix

Decoder

14971G-1

Publication# 14971 Rev: G Amendment/0

Issue Date: May 1998

12 3 4 5 6 7...13

中文翻译

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