Datasheet > ALD110804SC

ALD110804SC

更新时间： 2024-11-24 08:24:27

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
2页	39K
描述
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ALD110804SC 技术参数

是否无铅：	含铅	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

ALD110804SC 数据手册

ADVANCED

LINEAR

EPAD

DEVICES, INC.

ALD110804/ALD110904

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

= +0.4V

GS(th)

MATCHED PAIR MOSFET ARRAY

APPLICATIONS

GENERAL DESCRIPTION

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage(<0.4V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

ALD110804/ALD110904 are monolithic quad/dual N-Channel MOSFETs

matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

The ALD110804/ALD110904 MOSFETs are designed and built for ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco tracking

characteristics. They are versatile circuit elements useful as design com-

ponents for a broad range of analog applications, such as basic building

blocks for current sources, differential amplifier input stages, transmis-

sion gates, and multiplexer applications. For most applications, connect

V and N/C pins to the most negative voltage potential in the system and

• Sample and Hold circuits

• Analog and digital inverters

pin to the most positive voltage potential (or left open unused). All

other pins must have voltages within these voltage limits.

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

TheALD110804/ALD110904 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold charac-

teristics and can be biased and operated in the sub-threshold region.

Since these are MOSFET devices, they feature very large (almost infi-

nite) current gain in a low frequency, or near DC, operating environment.

• Discrete Analog switches / multiplexers

PIN CONFIGURATION

ALD110804

The ALD110804/ALD110904 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which re-

quire very high current gain, beta, such as current mirrors and current

sources. The high input impedance and the high DC current gain of the

Field Effect Transistors result from extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example,

DC beta of the device at a drain current of 3mA and input leakage current

of 30pA at 25°C is = 3mA/30pA = 100,000,000.

N/C*

M 2

M 1

FEATURES

M 4

M 3

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.40V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

N/C*

PC, SC PACKAGES

ALD110904

• Low input capacitance

• V

match (V ) to 10mV

GS(th)

• High input impedance — 10¹²Ω typical

• Positive, zero, and negative V

• DC current gain >10⁸

• Low input and output leakage currents

temperature coefficient

GS(th)

N/C*

ORDERING INFORMATION

M 1

M 2

Operating Temperature Range*

0°C to +70°C 0°C to +70°C

16-Pin

Plastic Dip

Package

16-Pin

SOIC

Package

8-Pin

Plastic Dip

Package

8Pin

SOIC

Package

PA, SA PACKAGES

*N/C pins are internally connected.

Connect to V- to reduce noise

ALD110804PC

ALD110804SC ALD110904PA ALD110904SA

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

www.aldinc.com

中文翻译

下载PDF

与ALD110804SC相关器件

型号	品牌	获取价格	描述	数据表
ALD110804SCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808_12	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808A	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808APC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808APCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808ASC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808ASCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808PC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808PCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

与ALD110804SC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

ALD110804SC

ALD110804SC 技术参数

ALD110804SC 数据手册

与ALD110804SC相关器件

与ALD110804SC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ALD110804SC

ALD110804SC 技术参数

ALD110804SC 数据手册

与ALD110804SC相关器件

与ALD110804SC相关文章

您还可以找

您在本页遇到什么问题？