Datasheet > ALD110804SCL

ALD110804SCL

更新时间： 2024-11-24 12:22:27

品牌	Logo	应用领域
先进线性 - ALD		PC
页数	文件大小	规格书
11页	108K
描述
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

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ALD110804SCL 技术参数

是否无铅：	不含铅	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.07	Samacsys Confidence：	3
Samacsys Status：	Released	Samacsys PartID：	1694596
Samacsys Pin Count：	16	Samacsys Part Category：	MOSFET (N-Channel)
Samacsys Package Category：	Small Outline Packages	Samacsys Footprint Name：	ALD110804SCL
Samacsys Released Date：	2018-12-26 13:43:57	Is Samacsys：	N
Base Number Matches：	1

ALD110804SCL 数据手册

DVANCED

INEAR

EVICES, INC.

EPAD

ALD110804/ALD110904

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

PRECISION MATCHED PAIR MOSFET ARRAY

= +0.40V

GS(th)

GENERAL DESCRIPTION

APPLICATIONS

ALD110804/ALD110904 are high precision monolithic quad/dual enhance-

ment mode N-Channel MOSFETS matched at the factory using ALD’s

proven EPAD® CMOS technology. These devices are intended for low

voltage, small signal applications. TheALD110804/ALD110904 MOSFETS

are designed and built for exceptional device electrical characteristics

matching. Since these devices are on the same monolithic chip, they also

exhibit excellent tempco tracking characteristics. They are versatile circuit

elements useful as design components for a broad range of analog appli-

cations, such as basic building blocks for current sources, differential am-

plifier input stages, transmission gates, and multiplexer applications. For

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage(<0.40V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

most applications, connect the V and IC pins to the most negative volt-

age in the system and the V pin to the most positive voltage. All other

• Sample and Hold circuits

pins must have voltages within these voltage limits at all times.

• Analog and digital inverters

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

The ALD110804/ALD110904 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold character-

istics and can be biased and operated in the sub-threshold region. Since

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

• Discrete Analog switches / multiplexers

PIN CONFIGURATION

ALD110804

The ALD110804/ALD110904 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the de-

vice at a drain current of 3mA and input leakage current of 30pA at 25°C

is = 3mA/30pA = 100,000,000.

IC*

M 2

M 1

M 4

FEATURES

M 3

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.40V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

IC*

SCL, PCL PACKAGES

• Low input capacitance

• V

match (V ) to 10mV

GS(th)

• High input impedance — 10¹²Ω typical

ALD110904

• Positive, zero, and negative V

temperature coefficient

GS(th)

• DC current gain >10⁸

IC*

• Low input and output leakage currents

ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))

M 1

M 2

Operating Temperature Range*

0°C to +70°C

16-Pin

SOIC

Package

16-Pin

Plastic Dip

Package

8-Pin

SOIC

Package

8-Pin

Plastic Dip

Package

SAL, PAL PACKAGES

*IC pins are internally connected.

Connect to V-

ALD110804SCL ALD110804PCL ALD110904SAL ALD110904PAL

* Contact factory for industrial temp. range or user-specified threshold voltage values.

www.aldinc.com

12 3 4 5 6 7...11

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与ALD110804SCL相关器件

型号	品牌	获取价格	描述	数据表
ALD110808	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808_12	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808A	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808APC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808APCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808ASC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808ASCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808PC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110808PCL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110808SC	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

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