Datasheet > AK43264S

AK43264S

更新时间： 2024-11-04 04:32:03

品牌	Logo	应用领域
ACCUTEK		存储
页数	文件大小	规格书
2页	113K
描述
262,144 X 8 Bit MOS Dynamic Random Access Memory

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数据手册

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AK43264S 数据手册

Accutek

Microcircuit

Corporation

AK48256S / AK48256G

262,144 X 8 Bit MOS

Dynamic Random Access Memory

DESCRIPTION

Front View

30-Pin SIM

The Accutek AK48256 high density memory modules is a random

access memory organized in 256K x 8 bit words. The assembly

consists of eight standard 256K x 1 DRAMs in plastic leaded chip

carriers (PLCC) mounted on the front side of a printed circuit board.

The module can be configured as a leadless 30 pad SIM or a leaded

30 pin SIP. This packaging approach provides a 6 to 1 density in-

crease over standard DIP packaging.

30-Pin SIP

The operation of the AK48256 is identical to eight 256K x 1 DRAMs.

The data input is tied to the data output and brought out separately

for each device, with common RAS, CAS and WE control. This

common I/O feature dictates the use of early-write cycles to prevent

contention of D and Q. Since the Write-Enable (WE) signal must al-

ways go low before CAS in a write cycle, Read-Write and

Read-Modify-Write operation is not possible.

FEATURES

· 262,144 by 8 bit organization

· Optional 30 Pad leadless SIM (Single In-Line Module) or 30

Pin leaded SIP (Single In-Line Package)

· JEDEC standard pinout

· Each device has common D and Q lines with common RAS,

CAS and WE control

· 2.8 Watt active and 180 mW standby (max)

· Operating free air temperature 0⁰C to 70⁰C

· Upward compatible with AK481024, AK581024, AK584096 and

AK5816384

· Functionally and Pin compatible with AK58256A

PIN NOMENCLATURE

PIN ASSIGNMENT

FUNCTIONAL DIAGRAM

PIN #

SYMBOL

Vcc

CAS

DQ!

PIN #

SYMBOL

A₀- A₈

DQ₁- DQ₈

CAS

Address Inputs

DQ5

Data In / Data Out

Column Address Strobe

Row Address Strobe

Write Enable

RAS

DQ6

Vss

DQ7

DQ2

Vcc

5v Supply

Vss

Ground

Vss

DQ3

No Connect

DQ8

RAS

MODULE OPTIONS

DQ4

Leadless SIM: AK48256S

Leaded SIP: AK48256G

Vcc

中文翻译

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