Datasheet > AIKQ120N75CP2

AIKQ120N75CP2

更新时间： 2024-11-06 11:13:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	1451K
描述
EDT2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AIKQ120N75CP2 数据手册

AIKQ120N75CP2

EDT2 IGBT

EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features

• V_CE= 750 V

• I_C= 120 A

• 750 V collector-emitter blocking voltage capability

• Suitable for 470 V V_DCsystems and increase overvoltage margin for 400 V V_DCsystems

• Very low V_CE(sat), 1.30 V at I_Cnom= 120 A, 25°C

• Short circuit robust t_sc= 5 µs at V_CE= 470 V, V_GE= 15 V

• Self limiting current under short circuit condition

• Positive thermal coeﬀicient and very tight parameter distribution for easy paralleling

• Drop-in replacement for previous generation devices I_C= 120 A, T_c= 100°C

• Excellent current sharing in parallel operation

• Smooth switching characteristics, low EMI signature

• Low gate charge Q_G

• Simple gate drive design

• Co-packed with fast sof recovery emitter controlled 3 diode

• TO247PLUS package with high creepage distance

• High reliability

Potential applications

• xEV traction inverter

• DC-link discharge switch

• Automotive aux-drives

Product validation

• Qualified for automotive applications

• Qualified according to AEC-Q101

Description

Type

Package

Marking

AIKQ120N75CP2

PG-TO247PLUS-3

AKQ12FCP

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2022-03-16

12 3 4 5 6 7...16

中文翻译

下载PDF

与AIKQ120N75CP2相关器件

型号	品牌	获取价格	描述	数据表
AIKQ200N75CP2	INFINEON	获取价格	EDT2
AIKW20N60CT	INFINEON	获取价格	IGBT TRENCHSTOP?
AIKW30N60CT	INFINEON	获取价格	IGBT TRENCHSTOP™
AIKW40N65DF5	INFINEON	获取价格	IGBT TRENCHSTOP? 5
AIKW40N65DF5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
AIKW40N65DH5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5
AIKW40N65DH5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
AIKW50N60CT	INFINEON	获取价格	IGBT TRENCHSTOP™
AIKW50N65DF5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5
AIKW50N65DF5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,