The Communications Edge TM
AH312
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +49 dBm OIP3 and
+33 dBm of compressed 1dB power. It is housed in a lead-
free/green/RoHS-compliant SOIC-8 package. All devices are
100% RF and DC tested.
• 400 – 2300 MHz
1
8
7
6
5
• +33 dBm P1dB
2
3
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
4
The AH312 is targeted for use as a driver amplifier in
• Lead-free/green/RoHS-compliant wireless infrastructure where high linearity and medium
Function
Vref
Input
Output
Vbias
GND
Pin No.
power is required. An internal active bias allows the
SOIC-8 SMT Pkg.
1
3
6, 7
8
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
Applications
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Backside Paddle
2, 4, 5
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
N/C or GND
Specifications (1)
Typical Performance (4)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Units Min Typ Max
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
MHz
MHz
dB
400
2300
900
18
-18
-11
+33
+49
2140
10
-20
-6.8
+33.2
+48
11
-19
-6.8
+33.4
+51
2140
10
9
dB
20
dB
6.8
Output P1dB
Output IP3 (2)
dBm
dBm
+32
+47
+33.2
+48
IS-95A Channel Power
dBm
+27
+27.5
@ -45 dBc ACPR
IS-95A Channel Power
dBm
dBm
+27.5
+25.3
wCDMA Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm
dB
+25.3
7.7
@ -45 dBc ACLR
wCDMA Channel Power
Noise Figure
Device Bias (3)
8.0
7.3
@ -45 dBc ACLR, 2140 MHz
+5 V @ 800 mA
Noise Figure
dB
mA
V
7.7
800
+5
Operating Current Range, Icc (3)
Device Voltage, Vcc
700
900
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
Ordering Information
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Part No.
Description
2 Watt, High Linearity InGaP HBT Amplifier
AH312-S8G
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
Device Current
Device Power
Junction Temperature
1400 mA
8 W
+250 °C
AH312-S8PCB900
AH312-S8PCB1960
AH312-S8PCB2140
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
Page 1 of 7 March 2006
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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