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AH314

更新时间： 2024-11-21 06:36:47
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TRIQUINT 放大器驱动
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6页 317K
描述
2.3-2.9 GHz WiMAX 2W Driver Amplifier

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AH314 数据手册

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AH314  
2.3-2.9 GHz WiMAX 2W Driver Amplifier  
Product Features  
Product Description  
Functional Diagram  
The AH314 is a high dynamic range broadband driver  
amplifier in a surface mount package. The two-stage  
amplifier has 23 dB of gain, while achieving +24 dBm of  
linear output power for 2.3–2.9 GHz WiMAX/WiBro  
applications.  
• 2.3 – 2.9 GHz  
• 23 dB Gain  
• EVM <2.5 %@ 24 dBm Pout  
• Internal Active Bias  
• +5V Single Supply Voltage  
• +33 dBm P1dB  
Vpd1  
Vcc2  
Vbias1  
GND / NC  
RF OUT  
RF OUT  
RF OUT  
GND / NC  
RF IN  
AH314 uses a high reliability +5V InGaP/GaAs HBT  
process technology. The device incorporates proprietary  
bias circuitry to compensate for variations in linearity and  
current draw over temperature. The device does not require  
any negative bias voltage; an internal active bias allows the  
AH314 to operate directly off a commonly available +5V  
supply. The RoHS-compliant/Lead-free 5x5mm QFN  
package is surface mountable to allow for low  
manufacturing costs to the end user.  
RF IN  
• Lead-free/RoHS-compliant  
5x5 mm QFN SMT package  
Applications  
• 802.16 WiMAX infrastructure  
• WiBro infrastructure  
The AH314 is targeted for use in a configuration for the  
driver stage amplifier in 802.16 WiMAX or WiBro  
basestations where high linearity and medium power is  
required.  
Specifications (1)  
Typical Performance (4)  
Parameter  
Operational Bandwidth  
Units Min Typ Max  
Parameter  
Frequency  
Output Channel Power  
Power Gain  
S11 – Input R.L.  
S22 – Output R.L.  
Output P1dB  
EVM  
Units Vcc=5V Vcc=6V  
2.6  
GHz  
dBm  
dB  
2.3  
2.9  
GHz  
dBm  
dB  
dB  
dB  
2.6  
+25  
23.1  
-8.2  
-16.7  
33  
+26.5  
23.1  
-8.6  
-26  
34.5  
2.2  
Output Channel Power  
Power Gain  
EVM(2)  
+24  
23  
%
%
dBm  
dB  
mA  
mA  
2.0  
6.6  
+33  
6.4  
36  
2.5  
Efficiency  
Output P1dB  
Noise Figure  
PIN_VPD Current, Ipd  
Quiescent Current, Icq(3)  
dBm  
%
1.8  
Efficiency  
%
8.2  
8.5  
Noise Figure  
Quiescent Current  
Vpd, Vbias  
dB  
6.4  
6.4  
600  
mA  
V
600  
+5  
650  
+6  
Icc @ 24dBm  
Device Voltage, Vcc  
mA  
V
700  
+5  
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, in 2.5-2.7GHz tuned application circuit  
shown in page 3.  
4. Typical parameters reflect performance in a tuned application circuit at +25° C.  
2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels.  
3. This corresponds to the quiescent current or operating current under small-signal conditions with  
bias resistor R1=68Ω off pin 1 and R2=150Ω off pin 16.  
4. This corresponds to the quiescent current or operating current under small signal conditions into  
pins 1, 2, 15 and 17. Pin 1 and 16 is used a reference voltage for the internal biasing circuitry. It is  
expected that PIN_VPD1 and PIN_VPD2 will pull 36 mA of current when used with series  
resistors (i.e. Total device current typically will be 636 mA).  
Absolute Maximum Rating  
Parameter  
Rating  
-55 to +125 ºC  
1.6 A  
19 dBm  
+8 V  
Storage Temperature  
Collector Current, Icc ( Icc1+Icc2)  
RF Input Power into a 50Ω Load  
Device Voltage  
Ordering Information  
Device Power  
Thermal Resistance, Rth  
8 W  
14.4 °C / W  
150 °C  
Part No.  
Description  
2.3-2.9 GHz WiMAX 2W Driver Amplifier  
2.4-2.7 GHz Evaluation Board  
AH314-G  
Junction Temperature  
AH314-PCB  
Operation of this device above any of these parameters may cause permanent damage.  
Standard T/R size = 500 pieces on a 7” reel.  
Specifications and information are subject to change without notice.  
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com  
Page 1 of 6 September 2008  
123456

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