Datasheet > AFV09P350-04N

AFV09P350-04N

更新时间： 2022-02-26 12:15:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	505K
描述
RF Power LDMOS Transistors

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AFV09P350-04N 数据手册

TYPICAL CHARACTERISTICS



= 48 Vdc, P = 100 W (Avg.)

out

= 860 mA, V

= 0.9 Vdc

DQA

GSB

Single--Carrier W--CDMA

3.84 MHz Channel Bandwidth

-- 2 1

-- 2 4

-- 2 7

-- 3 0

-- 3 3

-- 3 6

-- 2

-- 3

-- 4

-- 5

-- 6

-- 7

PARC

Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF

ACPR

940

820

840

860

880

900

920

960

980

f, FREQUENCY (MHz)

Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression

(PARC) Broadband Performance @ P_out= 100 Watts Avg.

-- 1 5

= 48 Vdc, P = 136 W (PEP), I

= 860 mA

out

DQA

= 0.9 Vdc, Two--Tone Measurements

GSB

(f1 + f2)/2 = Center Frequency of 940 MHz

-- 2 5

-- 3 5

-- 4 5

-- 5 5

-- 6 5

IM3--L

IM3--U

IM5--U

IM5--L

IM7--U

IM7--L

TWO--TONE SPACING (MHz)

100

Figure 4. Intermodulation Distortion Products

versus Two--Tone Spacing

-- 1 5

-- 2 0

-- 2 5

-- 3 0

-- 3 5

-- 4 0

-- 4 5

= 48 Vdc, I

= 860 mA, V

= 0.9 Vdc

GSB

DQA



f = 940 MHz, Single--Carrier W--CDMA

–1 dB = 41.4 W

-- 1

-- 2

–2 dB = 78 W

ACPR

PARC

-- 3

-- 4

–3 dB = 108.7 W

3.84 MHz Channel Bandwidth, Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF

-- 5

110

130

, OUTPUT POWER (WATTS)

out

Figure 5. Output Peak--to--Average Ratio

Compression (PARC) versus Output Power

AFV09P350--04NR3 AFV09P350--04GNR3

RF Device Data

Freescale Semiconductor, Inc.

1 2 3 456 7 8...20

下载PDF

与AFV09P350-04N相关器件

型号	品牌	描述	获取价格	数据表
AFV09P350-04NR3	NXP	RF Power LDMOS Transistors	获取价格
AFV10700GS	NXP	RF Power LDMOS Transistors	获取价格
AFV10700H	NXP	RF Power LDMOS Transistors	获取价格
AFV10700HR5	NXP	RF Power Field-Effect Transistor	获取价格
AFV10700HS	NXP	RF Power LDMOS Transistors	获取价格
AFV10700S	NXP	Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V	获取价格