Datasheet > AFV10700HR5

AFV10700HR5

更新时间： 2024-11-01 19:58:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	700K
描述
RF Power Field-Effect Transistor

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AFV10700HR5 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	2.11
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

AFV10700HR5 数据手册

Document Number: AFV10700H

Rev. 1, 01/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

AFV10700H

AFV10700HS

AFV10700GS

N--Channel Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for pulse applications operating at

1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at

reduced power. These devices are suitable for use in defense and commercial

pulse applications with large duty cycles and long pulses, such as IFF,

secondary surveillance radars, ADS--B transponders, DME and other complex

pulse chains.

1030–1090 MHz, 700 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

Typical Performance: In 1030–1090 MHz reference circuit, I

= 100 mA

DQ(A+B)

(V)

out

(W)

Frequency

(MHz)

(dB)



(%)

(1)

Signal Type

1030

1090

1030

1090

800 Peak

700 Peak

850 Peak

770 Peak

17.5

19.0

17.5

19.2

52.1

56.1

51.7

56.1

Pulse

(128 sec,

10% Duty Cycle)

NI--780H--4L

AFV10700H

Typical Performance: In 1030 MHz narrowband production test fixture,

= 100 mA

DQ(A+B)

(V)

out

(W)

Frequency

(MHz)

(dB)



(%)

Signal Type

(2)

1030

730 Peak

19.2

58.5

Pulse

NI--780S--4L

AFV10700HS

(128 sec,

10% Duty Cycle)

Narrowband Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(2)

1030

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

17.2 Peak

(3 dB

Overdrive)

No Device

Degradation

NI--780GS--4L

AFV10700GS

1. Measured in 1030–1090 MHz reference circuit (page 5).

2. Measured in 1030 MHz narrowband production test fixture (page 9).

Features



Internally input and output matched for broadband operation and ease of use

Device can be used in a single--ended, push--pull or quadrature configuration

Qualified up to a maximum of 55 V_DDoperation

Gate A

Gate B

Drain A

Drain B

High ruggedness, handles > 20:1 VSWR

Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation and gate voltage pulsing



Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)

(Top View)

Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

 2017–2018 NXP B.V.

AFV10700H AFV10700HS AFV10700GS

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...19

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与AFV10700HR5相关器件

型号	品牌	获取价格	描述	数据表
AFV10700HS	NXP	获取价格	RF Power LDMOS Transistors
AFV10700S	NXP	获取价格	Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V
AFV121KGS	NXP	获取价格	RF Power LDMOS Transistors
AFV121KH	NXP	获取价格	RF Power LDMOS Transistors
AFV121KHS	NXP	获取价格	RF Power LDMOS Transistors
AFV141KGS	NXP	获取价格	RF Power LDMOS Transistors
AFV141KH	NXP	获取价格	RF Power LDMOS Transistors
AFV141KHS	NXP	获取价格	RF Power LDMOS Transistors
AFV450V104K	OKAYA	获取价格	SNUBBER CAPACITOR
AFV450V225K	OKAYA	获取价格	SNUBBER CAPACITOR

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