Datasheet > AFV09P350-04N

AFV09P350-04N

更新时间： 2022-02-26 12:15:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	505K
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RF Power LDMOS Transistors

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AFV09P350-04N 数据手册

Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

= 860 mA, V = 0.9 Vdc,

GSB

Max

Unit

(1,2,3)

Functional Tests

(In Freescale Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I

DQA

= 100 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

out

ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.

Power Gain

18.5

45.0

6.6

19.5

48.5

7.2

21.5

—

Drain Efficiency



Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio

PAR

—

dBc

ACPR

—

–29.2

–27.0

Load Mismatch (In Freescale Test Fixture, 50 ohm system) I

= 860 mA, V

= 0.9 Vdc, f = 940 MHz

GSB

DQA

VSWR 10:1 at 52 Vdc, 500 W Pulsed Output Power

(3 dB Input Overdrive from 200 W Pulsed Rated Power)

No Device Degradation

(2)

Typical Performances (In Freescale Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I

= 860 mA, V

= 0.9 Vdc, 920--960 MHz

GSB

DQA

Bandwidth

@ 1 dB Compression Point, CW

P1dB

P3dB



—

200

500

–21

—



out

(4)

@ 3 dB Compression Point

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 920--960 MHz frequency range)

VBW Resonance Point

VBW

—

MHz

res

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 40 MHz Bandwidth @ P = 100 W Avg.

—

0.3

—

out

Gain Variation over Temperature

G

0.01

dB/C

(--30C to +85C)

Output Power Variation over Temperature

P1dB

—

0.0075

—

dB/C

(--30C to +85C)

1. Part internally input matched.

2. Measurement made with device in a symmetrical Doherty configuration.

3. Measurement made with device in straight lead configuration before any lead forming operation is applied.

4. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

AFV09P350--04NR3 AFV09P350--04GNR3

RF Device Data

Freescale Semiconductor, Inc.

1 234 5 6 7...20

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