Datasheet > AFV09P350-04N

AFV09P350-04N

更新时间： 2022-02-26 12:15:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	505K
描述
RF Power LDMOS Transistors

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AFV09P350-04N 数据手册

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

C

Drain--Source Voltage

–0.5, +105

–6.0, +10

55, +0

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature Range

Operating Junction Temperature Range

stg

–65 to +150

–40 to +150

–40 to +225

C

(1,2)

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



0.45

C/W

Case Temperature 86C, 102 W W--CDMA, 48 Vdc, I

= 860 mA, V

= 0.9 Vdc, 940 MHz

GSB

DQA

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

Table 5. Electrical Characteristics (T = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

(4)

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

Adc

DSS

GSS

(V = 105 Vdc, V = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V = 48 Vdc, V = 0 Vdc)

Gate--Source Leakage Current

(V = 5 Vdc, V = 0 Vdc)

(4)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 460 Adc)

1.3

2.0

0.1

1.8

2.5

2.3

3.0

0.3

Vdc

GS(th)

GS(Q)

DS(on)

Gate Quiescent Voltage

(V = 48 Vdc, I = 860 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V = 10 Vdc, I = 1.3 Adc)

0.21

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/

Application Notes -- AN1955.

4. Each side of device measured separately.

(continued)

AFV09P350--04NR3 AFV09P350--04GNR3

RF Device Data

Freescale Semiconductor, Inc.

123 4 5 6 7...20

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