Datasheet > AFGHL25T120RW

AFGHL25T120RW

更新时间： 2024-10-03 17:02:07

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	329K
描述
IGBT - Automotive Grade 1200 V 25 A

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中文翻译

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AFGHL25T120RW 数据手册

DATA SHEET

www.onsemi.com

IGBT - Power, Single,

N-Channel, Field Stop VII

(FS7), SCR, Power TO247-3L

TYP

I MAX

CES

CE(sat)

1200 V

1.38 V

25 A

1200 V, 1.38 V, 25 A

AFGHL25T120RW

Description

Using the novel field stop 7th generation IGBT technology

in TO247 3−lead package, this device offers the optimum

performance with low on state voltage and minimal switching losses

for both hard and soft switching topologies in automotive

applications.

Features

 Extremely Efficient Trench with Field Stop Technology

 Maximum Junction Temperature − T = 175C

 Short Circuit Rated and Low Saturation Voltage

 Fast Switching and Tightened Parameter Distribution

 AEC−Q101 Qualified, PPAP Available Upon Request

TO−247−3LD

CASE 340CX

 This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

MARKING DIAGRAM

Applications

 Automotive E−compressor

 Automotive EV PTC Heater

 OBC

AFGH25

120RW

&Z&3&K$Y

MAXIMUM RATINGS (T = 25C unless otherwise noted)

Parameter

Collector−to−Emitter Voltage

Gate−to−Emitter Voltage

Symbol Value

Unit

1200

20

30

AFGH25120RW

= Specific Device Code

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

= onsemi Logo

Transient Gate−to−Emitter Voltage

Collector Current

Power Dissipation

= 25C

= 100C

= 25C

= 100C

= 25C,

405

202

ORDERING INFORMATION

Device

Package

Shipping

Pulsed Collector Current

t = 10 ms (Note 1)

AFGHL25T120RW

TO−247−3L 30 Units / Tube

(Pb−Free)

Short Circuit Withstand Time

C

= 15 V, V = 800 V, T = 150C

CC C

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

stg

Lead Temperature for Soldering Purposes

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature

 Semiconductor Components Industries, LLC, 2023

Publication Order Number:

January, 2024 − Rev. 1

AFGHL25T120RW/D

12 3 4 5 6 7 8

中文翻译

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与AFGHL25T120RW相关器件

型号	品牌	获取价格	描述	数据表
AFGHL25T120RWD	ONSEMI	获取价格	IGBT - Automotive Grade 1200 V 25 A
AFGHL30T65RQDN	ONSEMI	获取价格	IGBT - 650 V 30 A - Short circuit rated FS4
AFGHL40T120RHD	ONSEMI	获取价格	IGBT - Automotive Grade low cost 1200 V 40 A
AFGHL40T120RLD	ONSEMI	获取价格	IGBT - Automotive Grade 1200 V 40 A
AFGHL40T120RW	ONSEMI	获取价格	IGBT - Automotive Grade 1200 V 40 A
AFGHL40T120RWD-STD	ONSEMI	获取价格	IGBT - Automotive Grade 1200 V 40A
AFGHL40T120RW-STD	ONSEMI	获取价格	IGBT - Automotive Grade 1200 V 40A
AFGHL40T65RQDN	ONSEMI	获取价格	IGBT - 650 V 40 A - Short circuit rated FS4
AFGHL40T65SPD	ONSEMI	获取价格	IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster per
AFGHL40T65SQ	ONSEMI	获取价格	AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBTStand alone IGBT without co-pack DIODE

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