Datasheet > AFGHL75T65SQDC

AFGHL75T65SQDC

更新时间： 2023-09-03 20:34:20

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	412K
描述
IGBT with SiC copack diode

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AFGHL75T65SQDC 数据手册

IGBT – Hybrid, Field Stop,

Trench

650 V, 75 A, TO247

AFGHL75T65SQDC

Using the novel field stop 4th generation IGBT technology and the

1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC

offers the optimum performance with both low conduction and

switching losses for high efficiency operations in various applications,

especially totem pole bridgeless PFC and Inverter.

www.onsemi.com

Features

75 A, 650 V

_CESat= 1.6 V (Typ.)

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.6 V (Typ.) @ I = 75 A

CE(Sat)

• 100% of the Parts are Tested for I (Note 2)

• Fast Switching

• Tight Parameter Distribution

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified and PPAP Capable

Typical Applications

• Automotive

• On & Off Board Chargers

• DC−DC Converters

• PFC

• Industrial Inverter

MAXIMUM RATINGS

TO−247−3LD

CASE 340CX

Rating

Symbol Value

Unit

Collector−to−Emitter Voltage

CES

GES

650

Gate−to−Emitter Voltage

Transient Gate−to−Emitter Voltage

MARKING DIAGRAM

Collector Current (Note 1)

@ T = 25°C

@ T = 100°C

Pulsed Collector Current (Note 2)

Pulsed Collector Current (Note 3)

Diode Forward Current (Note 1)

300

AYWWZZ

AFGHL

75T65SQDC

@ T

25°C

C =

@ T

100°C

C =

Pulsed Diode Maximum Forward Current

200

Maximum Power Dissipation @ T = 25°C

375

188

@ T = 100°C

YWW

= Assembly Location

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

Operating Junction / Storage Temperature

Range

T ,

STG

−55 to

°C

+175

AFGHL75T65SQDC = Specific Device Code

Maximum Lead Temp. for Soldering

Purposes, 1/8″ from case for 10 seconds

265

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limited by bond wire

ORDERING INFORMATION

Device

Package

Shipping

2. V = 400 V, V = 15 V, I = 300 A, R = 15 W, Inductive Load, 100% of the

AFGHL75T65SQDC TO−247−3L 30 Units / Rail

Parts are Tested.

3. Repetitive Rating: pulse width limited by max. Junction temperature

Publication Order Number:

January, 2021 − Rev. 1

AFGHL75T65SQDC/D

12 3 4 5 6 7...10

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