Document Number: AFIC31025N
Rev. 0, 10/2017
NXP Semiconductors
Technical Data
RF LDMOS Integrated
Power Amplifiers
AFIC31025N
AFIC31025GN
The AFIC31025N integrated circuit is designed with on--chip matching that
makes it usable from 2400 to 3100 MHz. This multi--stage device is designed
to support CW and pulse applications.
2400–3100 MHz, 25 W PEAK, 32 V
AIRFAST RF LDMOS
INTEGRATED POWER AMPLIFIERS
Typical Performance: In 2400–3100 MHz reference circuit, V = 32 Vdc
DD
Frequency
(MHz)
P
(W)
G
D
out
ps
Signal Type
(dB)
30.0
22.0
(%)
45.5
40.0
2400–2500
2700–3100
CW
25
Pulse
25 Peak
(300 sec, 15% Duty Cycle)
TO--270WB--17
PLASTIC
Features
AFIC31025N
On--chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with
enable/disable function (1)
Qualified up to a maximum of 32 VDD operation
Integrated ESD protection
TO--270WBG--17
PLASTIC
Typical Applications
AFIC31025GN
Civil S--Band radar
Weather radar
Maritime radar
Industrial heating
Data links
Plasma generation
V
V
DS1A
Carrier
17
VBW
A
V
1
2
VBW
DS1A
GS2A
A
V
V
RF
3
4
16
RF /V
out1 DS2A
inA
GS1A
RF
RF /V
out1 DS2A
inA
N.C.
5
GND
GND
N.C.
6
GND
15
14
GS1A
GS2A
Quiescent Current
Temperature Compensation
7
(1)
(1)
V
8
9
10
11
12
RF
inB
RF /V
out2 DS2B
V
V
V
GS1B
GS2B
GS1B
GS2B
Quiescent Current
Temperature Compensation
V
13
V
VBW
DS1B
B
Peaking
(Top View)
RF
RF /V
out2 DS2B
inB
Note: Exposed backside of the package is
the source terminal for the transistor.
V
VBW
DS1B
B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2017 NXP B.V.
AFIC31025N AFIC31025GN
RF Device Data
NXP Semiconductors
1