5秒后页面跳转
捷配首页

Datasheet > AFGHL30T65RQDN
AFGHL30T65RQDN PDF预览

AFGHL30T65RQDN

更新时间： 2023-09-03 20:32:26
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 326K
描述
IGBT - 650 V 30 A - Short circuit rated FS4  - Automotive qualified

阅读下载

中文翻译

获取价格

AFGHL30T65RQDN 数据手册

 浏览型号AFGHL30T65RQDN的Datasheet PDF文件第2页浏览型号AFGHL30T65RQDN的Datasheet PDF文件第3页浏览型号AFGHL30T65RQDN的Datasheet PDF文件第4页浏览型号AFGHL30T65RQDN的Datasheet PDF文件第5页浏览型号AFGHL30T65RQDN的Datasheet PDF文件第6页浏览型号AFGHL30T65RQDN的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
IGBT for Automotive  
Application  
650 V, 30 A  
30 A, 650 V,  
CE(Sat) = 1.57 V (Typ.)  
V
C
AFGHL30T65RQDN  
Using novel field stop IGBT technology, onsemi’s new series of  
FS4 IGBTs offer the optimum performance for automotive  
applications. This technology is Short circuit rated and offers high  
figure of merit with low conduction and switching losses.  
G
E
Features  
• Maximum Junction Temperature: T = 175°C  
J
• Positive Temperature Co−efficient for Easy Parallel Operation  
• High Current Capability  
• Low Saturation Voltage: V  
= 1.57 V (Typ.) @ I = 30 A  
C
• 100% of the Parts Tested for I (Note 2)  
CE(Sat)  
LM  
TO−247−3L  
CASE 340CX  
• High Input Impedance  
• Fast Switching  
• Tightened Parameter Distribution  
• This Device is Pb−Free and RoHS Compliant  
MARKING DIAGRAM  
Typical Applications  
• E−compressor for HEV/EV, PTC heater for HEV/EV  
AYWWZZ  
AFGHL30  
T65RQDN  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−to−Emitter Voltage  
V
V
650  
V
V
CES  
Gate−to−Emitter Voltage  
Transient Gate−to−Emitter Voltage  
20  
30  
GES  
Collector Current (Note 1)  
I
C
A
@ T = 25°C  
42  
30  
C
A
= Assembly Site  
@ T = 100°C  
C
WW  
Y
= Work Week Number  
= Year of Production,  
Last Number  
Pulsed Collector Current (Note 2)  
Pulsed Collector Current (Note 3)  
Diode Forward Current (Note 1)  
I
120  
120  
A
A
A
LM  
I
CM  
ZZ  
= Assembly Lot Number  
I
F
@ T = 25°C  
42  
30  
AFGHL30T65RQDN= Specific Device Code  
C
@ T = 100°C  
C
Pulsed Diode Maximum Forward Current  
I
I
120  
A
A
FM  
Non−Repetitive Forward Surge Current  
FM  
ORDERING INFORMATION  
(Half−Sine Pulse, tp = 8.3 ms, T = 25°C)  
140  
100  
C
(Half−Sine Pulse, tp = 8.3 ms, T = 150°C)  
C
Device  
Package  
Shipping  
Short Circuit Withstand Time  
t
ms  
SC  
V
= 15 V, V = 400 V, T = 150°C  
5
AFGHL30T65RQDN  
GE  
CC  
C
TO−247−3L 30 Units / Rail  
(Pb−Free)  
Maximum Power Dissipation  
P
W
D
@ T = 25°C  
230.8  
115.4  
C
@ T = 100°C  
C
Operating Junction/Storage Temperature Range  
T , T  
−55 to  
°C  
°C  
J
STG  
+175  
Maximum Lead Temp. for Soldering Purposes,  
1/8″ from case for 5 seconds  
T
L
265  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Value limited by bond wire.  
2. V = 600 V, V = 15 V, I = 90 A, R = 75 W, Inductive Load, 100% Tested.  
CC  
GE  
C
G
3. Repetitive Rating: pulse width limited by max. Junction temperature.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
November, 2021 − Rev. 1  
AFGHL30T65RQDN/D  
 
1234567...9

中文翻译

下载PDF

与AFGHL30T65RQDN相关器件

型号 品牌 获取价格 描述 数据表
AFGHL40T120RHD ONSEMI

获取价格

 		IGBT - Automotive Grade low cost 1200 V 40 A
AFGHL40T120RLD ONSEMI

获取价格

 		IGBT - Automotive Grade 1200 V 40 A
AFGHL40T120RW ONSEMI

获取价格

 		IGBT - Automotive Grade 1200 V 40 A
AFGHL40T120RWD-STD ONSEMI

获取价格

 		IGBT - Automotive Grade 1200 V 40A 
AFGHL40T120RW-STD ONSEMI

获取价格

 		IGBT - Automotive Grade 1200 V 40A
AFGHL40T65RQDN ONSEMI

获取价格

 		IGBT - 650 V 40 A - Short circuit rated FS4 
AFGHL40T65SPD ONSEMI

获取价格

 		IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster per
AFGHL40T65SQ ONSEMI

获取价格

 		AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBTStand alone IGBT without co-pack DIODE
AFGHL40T65SQD ONSEMI

获取价格

 		AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT
AFGHL50T65RQDN ONSEMI

获取价格

 		IGBT - 650 V 50 A - Short circuit rated FS4 

与AFGHL30T65RQDN相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证