Datasheet > AFGHL40T65SPD

AFGHL40T65SPD

更新时间： 2023-09-03 20:26:23

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	405K
描述
IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance.

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AFGHL40T65SPD 数据手册

Field Stop Trench IGBT

40 A, 650 V

AFGHL40T65SPD

Description

Using the novel field stop 3 generation IGBT technology,

AFGHL40T65SPD offers the optimum performance with both low

conduction loss and switching loss for a high efficiency operation in

various applications, which provides 50 V higher blocking voltage

and rugged high current switching reliability.

www.onsemi.com

CES

CE(Sat)

Meanwhile, this part also offers and advantage of outstanding

performance in parallel operation.

650 V

1.16 mJ

1.85 V

Features

• AEC−Q101 Qualified

• Low Saturation Voltage: V

= 1.85 V (Typ.) @ I = 40 A

CE(Sat)

• 100% Of The Part Are Dynamically Tested (Note 1)

• Short Circuit Ruggedness > 5 mS @ 25°C

• Maximum Junction Temperature: T = 175°C

• Fast Switching

• Tight Parameter Distribution

• Positive Temperature Co−efficient for Easy Parallel Operating

• Co−Packed With Soft And Fast Recovery Diode

Typical Applications

• On−board Charger

TO−247−3L

• Air Conditioner Compressor

• PTC Heater

CASE 340CX

• Motor Drivers

MARKING DIAGRAM

• Other Automotive Power−Train Applications

&Y&Z&3&K

AFGHL

40T65SPD

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Data code

= 2−Digit Lot Traceability code

AFGHL40T65SPD = Specific Device Code

ORDERING INFORMATION

Device

Package

Shipping

AFGHL40T65SPD TO−247−3L

30 Units / Rail

Publication Order Number:

September, 2020 − Rev. 5

AFGHL40T65SPD/D

12 3 4 5 6 7...10

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