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AFGHL40T120RW PDF预览

AFGHL40T120RW

更新时间: 2024-04-09 18:59:37
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 330K
描述
IGBT - Automotive Grade 1200 V 40 A

AFGHL40T120RW 数据手册

 浏览型号AFGHL40T120RW的Datasheet PDF文件第2页浏览型号AFGHL40T120RW的Datasheet PDF文件第3页浏览型号AFGHL40T120RW的Datasheet PDF文件第4页浏览型号AFGHL40T120RW的Datasheet PDF文件第5页浏览型号AFGHL40T120RW的Datasheet PDF文件第6页浏览型号AFGHL40T120RW的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
IGBT – Power, Single  
N-Channel, Field Stop VII  
(FS7), SCR, Power TO247-3L  
BV  
V
TYP  
I MAX  
C
CES  
CE(sat)  
1200 V  
1.42 V  
40 A  
PIN CONNECTIONS  
1200 V, 1.42 V, 40 A  
C
AFGHL40T120RW  
Description  
G
Using the novel field stop 7th generation IGBT technology in  
TO247 3lead package, this device offers the optimum performance  
with low on state voltage and minimal switching losses for both hard  
and soft switching topologies in automotive applications.  
E
Features  
Extremely Efficient Trench with Field Stop Technology  
Maximum Junction Temperature T =175C  
J
Short Circuit Rated / Low Saturation Voltage  
Fast Switching / Tightened Parameter Distribution  
AECQ101 Qualified, PPAP Available Upon Request  
G
C
E
TO2473LD  
CASE 340CX  
This Device is PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING DIAGRAM  
Applications  
Automotive Ecompressor  
Automotive EV PTC Heater  
OBC  
AFGH40  
120RW  
&Z&3&K$Y  
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
J
Parameter  
CollectortoEmitter Voltage  
GatetoEmitter Voltage  
Symbol  
Value  
1200  
20  
30  
80  
Unit  
V
CE  
V
GE  
V
Transient GatetoEmitter Voltage  
AFGH40120RW  
= Specific Device Code  
= Assembly Plant Code  
= 3Digit Date Code  
= 2Digit Lot Traceability Code  
= onsemi Logo  
&Z  
&3  
&K  
$Y  
Collector Current  
Power Dissipation  
T
T
T
T
T
= 25C  
= 100C  
= 25C  
= 100C  
= 25C,  
I
A
C
C
C
C
C
C
40  
P
576  
288  
120  
W
D
ORDERING INFORMATION  
Pulsed Collector  
Current  
I
A
CM  
Device  
Package  
Shipping  
t = 10 ms (Note 1)  
p
AFGHL40T120RW  
TO2473L  
(PbFree)  
30 Units /  
Tube  
Short Circuit Withstand Time  
= 15 V, V = 800 V, T = 150C  
T
6
ms  
C  
SC  
V
GE  
CC  
C
Operating Junction and Storage Temperature  
Range  
T , T  
J
55 to  
+175  
stg  
Lead Temperature for Soldering Purposes  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: Pulse width limited by max. junction temperature  
Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
January, 2024 Rev. 0  
AFGHL40T120RW/D  
 

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