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ADuM4121-1CRIZ PDF预览

ADuM4121-1CRIZ

更新时间： 2024-02-12 06:25:10
品牌 Logo 应用领域
亚德诺 - ADI 驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 529K
描述
2 A peak output current (<2 Ω RDSON)

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ADuM4121-1CRIZ 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP,
针数：8Reach Compliance Code：compliant
风险等级：2.18高边驱动器：YES
接口集成电路类型：BUFFER OR INVERTER BASED IGBT/MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：7.5 mm
湿度敏感等级：3功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C标称输出峰值电流：2.3 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260座面最大高度：2.65 mm
最大供电电压：6.5 V最小供电电压：2.5 V
标称供电电压：5 V电源电压1-最大：35 V
电源电压1-分钟：4.5 V电源电压1-Nom：15 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
断开时间：0.053 µs接通时间：0.042 µs
宽度：5.85 mmBase Number Matches：1

ADuM4121-1CRIZ 数据手册

 浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第3页浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第4页浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第5页浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第7页浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第8页浏览型号ADuM4121-1CRIZ的Datasheet PDF文件第9页 
ADuM4121/ADuM4121-1  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
Ambient temperature = 25°C, unless otherwise noted.  
THERMAL RESISTANCE  
Thermal performance is directly linked to printed circuit board  
(PCB) design and operating environment. Careful attention to  
PCB thermal design is required. θJA is thermal resistance,  
junction to ambient (°C/W).  
Table 7.  
Parameter  
Rating  
Storage Temperature Range (TST)  
Junction Operating Temperature Range (TJ)  
Supply Voltages  
VDD1 to GND1  
VDD2 to GND2  
−55°C to +150°C  
−40°C to +125°C  
Table 8. Thermal Resistance  
−0.3 V to +7 V  
−0.3 V to +40 V  
Package Type  
θJA  
Unit  
RI-8-11  
°C/W  
104.2  
Input Voltages  
1 Test Condition 1: thermal impedance simulated values are based on a  
4-layer PCB.  
VI+, VI−1  
−0.3 V to +7 V  
−0.3 V to VDD2 + 0.3 V  
2
VCLAMP  
Output Voltages  
2
VOUT  
−0.3 V to VDD2 + 0.3 V  
−200 kV/µs to  
+200 kV/µs  
ESD CAUTION  
Common-Mode Transients (|CM|)3  
1 Rating assumes VDD1 is above 2.5 V. VI+ and VI− are rated up to 6.5 V when  
VDD1 is unpowered.  
2 Referenced to GND2, maximum of 40 V.  
3 |CM| refers to common-mode transients across the insulation barrier.  
Common-mode transients exceeding the Absolute Maximum Rating can  
cause latch-up or permanent damage.  
Stresses at or above those listed under Absolute Maximum  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
Table 9. Maximum Continuous Working Voltage1  
Parameter  
Rating Unit  
Constraint  
AC Voltage  
Bipolar Waveform  
Basic Insulation  
849  
V peak 50-year minimum insulation lifetime  
Reinforced Insulation 789  
Unipolar Waveform  
V peak Lifetime limited by package creepage maximum approved working voltage per IEC 60950-1  
Basic Insulation  
Reinforced Insulation 849  
DC Voltage  
1698  
V peak 50-year minimum insulation lifetime  
V peak 50-year minimum insulation lifetime  
Basic Insulation  
Reinforced Insulation 558  
1118  
V peak Lifetime limited by package creepage maximum approved working voltage per IEC 60950-1  
V peak Lifetime limited by package creepage maximum approved working voltage per IEC 60950-1  
1 Maximum continuous working voltage refers to continuous voltage magnitude imposed across the isolation barrier. See the Insulation Lifetime section for more  
details.  
Table 10. Truth Table  
VI−  
VI+  
VDD1 State  
Powered  
Powered  
Powered  
Unpowered  
Powered  
VDD2 State  
Powered  
Powered  
Powered  
Powered  
Unpowered  
VOUT Output  
Low  
High  
Low  
Low  
Low1  
Don’t care  
Low  
High  
Don’t care  
Don’t care  
Low  
High  
Don’t care  
Don’t care  
Don’t care  
1 The output is low, but not actively driven because the device is not powered.  
Rev. 0| Page 6 of 16  
 
 
 
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