Data Sheet
ADH8411S
Commercial Space
Product
0.01 GHz to 10 GHz Low Noise Amplifier
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Low noise figure: 1.7 dB typical
► Single positive supply (self biased)
► High gain: 15.5 dB typical
► High OIP3: 34 dBm typical
► 6-lead, 2 mm × 2 mm LFCSP
Figure 1.
COMMERCIAL SPACE FEATURES
GENERAL DESCRIPTION
► Supports aerospace applications
► Certificate of Conformance
► Wafer diffusion lot traceability
► Burn-in, life test, and deltas analysis
► Radiation lot acceptance test (RLAT)
► Total ionizing dose (TID)
The ADH8411S-CSH is a gallium arsenide (GaAs), monolithic mi-
crowave integrated circuit (MMIC), pseudomorphic high electron
mobility transistor (pHEMT), low noise wideband amplifier that
operates from 0.01 GHz to 10 GHz.
The ADH8411S-CSH provides a typical gain of 15.5 dB, a 1.7 dB
typical noise figure, and a typical output third-order intercept (OIP3)
of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The
saturated output power (PSAT) of 19.5 dBm typical enables the low
noise amplifier (LNA) to function as a local oscillator (LO) driver for
many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q),
or image rejection mixers.
► Radiation benchmark
► No SEL occurs at effective linear energy transfer (LET): ≤ 62.4
MeV-cm2/mg
APPLICATIONS
► Low earth orbit (LEO) satellites
► Military communications
The ADH8411S-CSH also features inputs and outputs that are
internally matched to 50 Ω, making the device ideal for surface-
mounted technology (SMT)-based, high capacity microwave radio
applications.
The ADH8411S-CSH is housed in a RoHS compliant, 2 mm × 2
mm, 6-lead LFCSP.
Throughout this data sheet, multifunction pins, such as RFOUT/VDD
are referred to either by the entire pin name or by a single function
of the pin, for example, RFOUT, when only that function is relevant.
,
Additional application and technical information can be found in the
Commercial Space Products Program brochure and the HMC8411
data sheet.
Rev. 0
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