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ADG904BRU PDF预览

ADG904BRU

更新时间: 2024-10-28 19:52:11
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 光电二极管
页数 文件大小 规格书
17页 1184K
描述
4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20, MO-153AC, TSSOP-20

ADG904BRU 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP,针数:20
Reach Compliance Code:unknown风险等级:5.05
模拟集成电路 - 其他类型:SINGLE-ENDED MULTIPLEXERJESD-30 代码:R-PDSO-G20
JESD-609代码:e0长度:6.5 mm
湿度敏感等级:1信道数量:4
功能数量:1端子数量:20
标称断态隔离度:37 dB最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
座面最大高度:1.2 mm最大供电电压 (Vsup):2.75 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.5 V
表面贴装:YES最长断开时间:16 ns
最长接通时间:10 ns技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:4.4 mmBase Number Matches:1

ADG904BRU 数据手册

 浏览型号ADG904BRU的Datasheet PDF文件第1页浏览型号ADG904BRU的Datasheet PDF文件第2页浏览型号ADG904BRU的Datasheet PDF文件第3页浏览型号ADG904BRU的Datasheet PDF文件第5页浏览型号ADG904BRU的Datasheet PDF文件第6页浏览型号ADG904BRU的Datasheet PDF文件第7页 
ADG904/ADG904-R  
SPECIFICATIONS  
VDD = 1.65 V to 2.75 V, GND = 0 V, Input Power = 0 dBm, all specifications TMIN to TMAX, unless otherwise noted.1  
Table 1.  
B Version  
Parameter  
Symbol  
Conditions  
Min  
Typ2 Max  
Unit  
AC ELECTRICAL CHARACTERISTICS  
Operating Frequency3  
3 dB Frequency4  
DC  
2
2.5  
7
GHz  
GHz  
dBm  
dBm  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
Input Power4  
0 V dc bias  
0.5 V dc bias  
DC to 100 MHz; VDD = 2.5 V 10%  
500 MHz; VDD = 2.5 V 10%  
1000 MHz; VDD = 2.5 V 10%  
100 MHz  
500 MHz  
1000 MHz  
100 MHz  
500 MHz  
1000 MHz  
DC to 100 MHz  
500 MHz  
1000 MHz  
DC to 100 MHz  
500 MHz  
16  
Insertion Loss  
S21, S12  
S21, S12  
S21, S12  
S11, S22  
S11, S22  
tON (  
0.4  
0.6  
1.1  
60  
45  
37  
58  
32  
35  
27  
26  
30  
22  
23  
22  
8.5  
0.8  
0.9  
1.5  
Isolation—RFC to RF1–RF4  
Crosstalk  
51  
35  
30  
50  
35  
30  
21  
18  
15  
18  
16  
18  
Return Loss (On Channel)4  
Return Loss (Off Channel)4  
dB  
dB  
ns  
1000 MHz  
50% EN to 90% RF  
On Switching Time4  
Off Switching Time4  
10  
16  
)
EN  
tOFF (  
50% EN to 10% RF  
13  
ns  
)
EN  
Transition Time  
tTRANS  
tRISE  
tFALL  
P–1 dB  
IP3  
50% Ax to 10% RF  
10% to 90% RF  
90% to 10% RF  
1000 MHz  
900 MHz/901 MHz, 4 dBm  
12  
3
7.5  
16  
31  
3
15  
5
9
ns  
ns  
ns  
dBm  
dBm  
mV p-p  
Rise Time4  
Fall Time4  
1 dB Compression4  
Third-Order Intermodulation Intercept  
Video Feedthrough5  
DC ELECTRICAL CHARACTERISTICS  
Input High Voltage  
26.5  
VINH  
VINH  
VINL  
VINL  
II  
VDD = 2.25 V to 2.75 V  
VDD = 1.65 V to 1.95 V  
VDD = 2.25 V to 2.75 V  
VDD = 1.65 V to 1.95 V  
0 ≤ VIN ≤ 2.75 V  
1.7  
0.65 VCC  
V
V
V
V
Input Low Voltage  
0.7  
0.35 VCC  
1
Input Leakage Current  
CAPACITANCE4  
0.1  
μA  
RF Port On Capacitance  
Digital Input Capacitance  
POWER REQUIREMENTS  
VDD  
CRF ON  
C
f = 1 MHz  
f = 1 MHz  
3
2
pF  
pF  
1.65  
2.75  
1
V
μA  
Quiescent Power Supply Current  
IDD  
Digital inputs = 0 V or VDD  
0.1  
1 Temperature range B version: −40°C to +85°C.  
2 Typical values are at VDD = 2.5 V and 25°C, unless otherwise stated.  
3 Operating frequency is the point at which insertion loss degrades by 1.5 dB.  
4 Guaranteed by design, not subject to production test.  
5 Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test  
setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.  
Rev. B | Page 3 of 16  
 
 
 

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