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ADG779BKSZ-REEL7 PDF预览

ADG779BKSZ-REEL7

更新时间: 2024-11-26 21:21:51
品牌 Logo 应用领域
亚德诺 - ADI 光电二极管
页数 文件大小 规格书
13页 224K
描述
CMOS, Low Voltage 2.5 Ω SPDT Switch / 2:1 Mux

ADG779BKSZ-REEL7 数据手册

 浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第2页浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第3页浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第4页浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第5页浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第6页浏览型号ADG779BKSZ-REEL7的Datasheet PDF文件第7页 
CMOS 1.8 V to 5.5 V, 2.5 Ω  
SPDT Switch/2:1 Mux in Tiny SC70 Package  
ADG779  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
1.8 V to 5.5 V single supply  
2.5 Ω on resistance  
ADG779  
S2  
D
0.75 Ω on-resistance flatness  
−3 dB bandwidth >200 MHz  
Rail-to-rail operation  
6-lead SC70 package  
Fast switching times  
tON 20 ns  
S1  
IN  
SWITCHES SHOWN FOR  
A LOGIC 1 INPUT  
Figure 1.  
tOFF 6 ns  
Typical power consumption (<0.01 μW)  
TTL/CMOS compatible  
APPLICATIONS  
Battery-powered systems  
Communication systems  
Sample hold systems  
Audio signal routing  
Video switching  
Mechanical reed relay replacements  
GENERAL DESCRIPTION  
PRODUCT HIGHLIGHTS  
The ADG779 is a monolithic CMOS SPDT (single-pole,  
double-throw) switch. This switch is designed on a submicron  
process that provides low power dissipation yet gives high  
switching speed, low on resistance, and low leakage currents.  
1. Tiny 6-Lead SC70 Package.  
2. 1.8 V to 5.5 V Single-Supply Operation. The ADG779  
offers high performance, including low on resistance and  
fast switching times, and is fully specified and guaranteed  
with 3 V and 5 V supply rails.  
The ADG779 operates from a single supply range of 1.8 V to  
5.5 V, making it ideal for use in battery-powered instruments  
and with the new generation of DACs and ADCs from Analog  
Devices, Inc.  
3. Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V  
operation, RON is typically 40 Ω over the temperature range.  
Each switch of the ADG779 conducts equally well in both  
directions when on. The ADG779 exhibits break-before-make  
switching action.  
4. On-Resistance Flatness (RFLAT (ON)) (0.75 Ω typ).  
5. −3 dB Bandwidth > 200 MHz.  
Because of the advanced submicron process, −3 dB bandwidth  
of greater than 200 MHz can be achieved.  
6. Low Power Dissipation. CMOS construction ensures low  
power dissipation.  
The ADG779 is available in a 6-lead SC70 package.  
7. 14 ns Switching Times.  
Rev. A  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights ofthird parties that may result fromits use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
© 2005 Analog Devices, Inc. All rights reserved.  
 

ADG779BKSZ-REEL7 替代型号

型号 品牌 替代类型 描述 数据表
ADG779BKSZ-REEL ADI

完全替代

CMOS, Low Voltage 2.5 &Omega; SPDT Switch / 2:1 Mux
ADG779BKS-REEL7 ADI

完全替代

CMOS 1.8 V to 5.5 V, 2.5 Ω SPDT Switch/2:1 M
ADG779BKS-R2 ADI

完全替代

CMOS 1.8 V to 5.5 V, 2.5 Ω SPDT Switch/2:1 M

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