CMOS 1.8 V to 5.5 V, 2.5 Ω
SPDT Switch/2:1 Mux in Tiny SC70 Package
ADG779
FUNCTIONAL BLOCK DIAGRAM
FEATURES
1.8 V to 5.5 V single supply
2.5 Ω on resistance
ADG779
S2
D
0.75 Ω on-resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
tON 20 ns
S1
IN
SWITCHES SHOWN FOR
A LOGIC 1 INPUT
Figure 1.
tOFF 6 ns
Typical power consumption (<0.01 μW)
TTL/CMOS compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacements
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submicron
process that provides low power dissipation yet gives high
switching speed, low on resistance, and low leakage currents.
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single-Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
3. Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, RON is typically 40 Ω over the temperature range.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
4. On-Resistance Flatness (RFLAT (ON)) (0.75 Ω typ).
5. −3 dB Bandwidth > 200 MHz.
Because of the advanced submicron process, −3 dB bandwidth
of greater than 200 MHz can be achieved.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
The ADG779 is available in a 6-lead SC70 package.
7. 14 ns Switching Times.
Rev. A
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