CMOS, ± ± ꢀV/± ꢀ,
4 Ω, Single SPDT Switches
ADG619VADG620
FUNCTIONAL BLOCK DIAGRAM
FEATURES
6.5 Ω (maximum) on resistance
0.8 Ω (maximum) on-resistance flatness
2.7 V to 5.5 V single supply
ADG619/ADG620
S2
D
S1
2.7 V to 5.5 V dual supply
Rail-to-rail operation
IN
8-lead SOT-23, 8-lead MSOP
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
NOTES
1. SWITCHES SHOWN FOR
A LOGIC 1 INPUT.
APPLICATIONS
Figure 1.
Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avionics
Relay replacement
Battery-powered systems
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG619/ADG620 are monolithic, CMOS single-pole
double-throw (SPDT) switches. Each switch conducts equally
well in both directions when the device is on.
1. Low on resistance (RON): 4 Ω typical.
2. Dual ±2.7 ꢀ to ±±.± ꢀ or single 2.7 ꢀ to ±.± ꢀ supplies.
3. Low power dissipation.
4. Fast tON/tOFF
±. Tiny, 8-lead SOT-23 and 8-lead MSOP.
.
The ADG619/ADG620 offer a low on resistance of 4 Ω, which
is matched to within 0.7 Ω between channels. These switches
also provide low power dissipation, yet result in high switching
speeds. The ADG619 exhibits break-before-make switching
action, thus preventing momentary shorting when switching
channels. The ADG620 exhibits make-before-break action.
Table 1. Truth Table for the ADG619/ADG620
IN
0
Switch S1
On
Switch S2
Off
1
Off
On
The ADG619/ADG620 are available in an 8-lead SOT-23 and
an 8-lead MSOP.
Rev. C
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