CMOS, 5 V/+5 V,
4 Ω, Single SPDT Switch
ADG619-EP
FUNCTIONAL BLOCK DIAGRAM
FEATURES
14 Ω (maximum) on resistance
1.4 Ω (maximum) on-resistance flatness
2.7 V to 5.5 V single supply
ADG619-EP
S2
D
S1
2.7 V to 5.5 V dual supply
Rail-to-rail operation
8-lead SOT-23
IN
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
Supports defense and aerospace applications
(AQEC standard)
Military temperature range: −55°C to +125°C
Controlled manufacturing baseline
One assembly and test site
NOTES
1. SWITCHES SHOWN FOR
A LOGIC 1 INPUT.
Figure 1.
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avionics
Relay replacement
Battery-powered systems
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG619-EP is a monolithic, CMOS single-pole double-
throw (SPDT) switch.
1. Low on resistance (RON): 4 Ω typical.
2. Dual 2.7 V to 5.5 V or single 2.7 V to 5.5 V supplies.
3. Low power dissipation.
The ADG619-EP offers a low on resistance of 4 Ω, which is
matched to within 0.7 Ω between channels. These switches also
provide low power dissipation, yet result in high switching
speeds. The ADG619-EP exhibits break-before-make switching
action, thus preventing momentary shorting when switching
channels.
4. Fast tON/tOFF
.
5. Tiny, 8-lead SOT-23 package.
The ADG619-EP is available in an 8-lead SOT-23 package.
Additional application and technical information can be found
in the ADG619 data sheet.
Rev. 0
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