4 Ω RON, Triple/Quad SPDT
± ±1 ꢀ/ꢁ±ꢂ ꢀ/± 1 ꢀ iCMOS® Switches
ADG±433/ADG±434
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
4.7 Ω maximum on resistance @ 25°C
0.5 Ω on resistance flatness
33 V supply maximum ratings
Fully specified at 15 V/+12 V/ 5 V
3 V logic compatible inputs
ADG1433
S1A
D1
S1B
S3B
D3
S2B
Rail-to-rail operation
S3A
D2
Break-before-make switching action
16-/20-lead TSSOP and 4 mm × 4 mm LFCSP_VQ packages
S2A
LOGIC
APPLICATIONS
Relay replacement
IN1 IN2 IN3 EN
Audio and video routing
Automatic test equipment
Data acquisition systems
Temperature measurement systems
Avionics
Battery-powered systems
Communication systems
Medical equipment
SWITCHES SHOWN FOR
A “1” INPUT LOGIC.
Figure 1. ADG1433 TSSOP and LFCSP_VQ
ADG1434
ADG1434
S1A
D1
S4A
D2
S1A
D1
S4A
D2
S1B
IN1
S4B
IN4
S1B
S4B
S2B
D2
S3B
D3
IN2
S2B
D2
IN3
S3B
D3
S2A
S3A
LOGIC
S2A
S3A
IN1 IN2 IN3 IN4 EN
SWITCHES SHOWN FOR
A “1” INPUT LOGIC.
SWITCHES SHOWN FOR
A “1” INPUT LOGIC.
Figure 2. ADG1434 TSSOP
Figure 3. ADG1434 LFCSP_VQ
GENERAL DESCRIPTION
The ADG1433 and ADG1434 are monolithic industrial-CMOS
(iCMOS) analog switches comprising three independently
selectable single-pole, double-throw (SPDT) switches and four
independently selectable SPDT switches, respectively.
CMOS processes, iCMOS components can tolerate high supply
voltages while providing increased performance, dramatically
lower power consumption, and reduced package size.
The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and gain
switching applications, where low distortion is critical. iCMOS
construction ensures ultralow power dissipation, making the parts
ideally suited for portable and battery-powered instruments.
All channels exhibit break-before-make switching action that
EN
prevents momentary shorting when switching channels. An
input on the ADG1433 (LFCSP and TSSOP packages) and
ADG1434 (LFCSP package only) is used to enable or disable the
device. When disabled, all channels are switched off.
PRODUCT HIGHLIGHTS
The iCMOS modular manufacturing process combines high
voltage, complementary metal-oxide semiconductor (CMOS)
and bipolar technologies. It enables the development of a wide
range of high performance analog ICs capable of 33 V operation
in a footprint that no other generation of high voltage parts has
been able to achieve. Unlike analog ICs using conventional
1. 4.7 Ω maximum on resistance.
2. 0.5 Ω on resistance flatness.
3. 3 V logic compatible digital input VIH = 2.0 V, VIL = 0.8 V.
4. 16-/20-lead TSSOP and 4 mm × 4 mm LFCSP_VQ packages.
Rev. 0
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