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ADG1419BRMZ PDF预览

ADG1419BRMZ

更新时间： 2024-02-19 22:15:33
品牌 Logo 应用领域
亚德诺 - ADI 开关光电二极管
页数 文件大小 规格书
16页 513K
描述
2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPDT Switch

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ADG1419BRMZ 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TSSOP
包装说明：TSSOP,针数：8
Reach Compliance Code：unknown风险等级：5.5
模拟集成电路 - 其他类型：SPDTJESD-30 代码：S-PDSO-G8
JESD-609代码：e3长度：3 mm
湿度敏感等级：1负电源电压最大值（Vsup）：-16.5 V
负电源电压最小值（Vsup）：-13.5 V标称负供电电压 (Vsup)：-15 V
信道数量：1功能数量：1
端子数量：8标称断态隔离度：64 dB
通态电阻匹配规范：0.05 Ω最大通态电阻 (Ron)：3.2 Ω
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：SQUARE封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260座面最大高度：1.1 mm
最大供电电压 (Vsup)：16.5 V最小供电电压 (Vsup)：13.5 V
标称供电电压 (Vsup)：15 V表面贴装：YES
最长断开时间：180 ns最长接通时间：140 ns
技术：BICMOS温度等级：AUTOMOTIVE
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：3 mm

ADG1419BRMZ 数据手册

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2.1 Ω On Resistance, 1ꢀ ꢁV/12 ꢁV ꢀ ꢁ  
iCMOS SPDT Switch  
ADG1419  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
2.1 Ω on resistance  
ADG1419 LFCSP  
SA  
0.5 Ω maximum on resistance flatness at 25°C  
Up to 390 mA continuous current  
Fully specified at +12 V, 15 V, 5 V  
No VL supply required  
D
SB  
DECODER  
3 V logic-compatible inputs  
Rail-to-rail operation  
8-lead MSOP and 8-lead 3 mm × 2 mm LFCSP packages  
IN  
EN  
SWITCHES SHOWN FOR A LOGIC 0 INPUT.  
Figure 1. 8-Lead LFCSP Functional Block Diagram  
APPLICATIONS  
Automatic test equipment  
Data acquisition systems  
Battery-powered systems  
Relay replacements  
ADG1419 MSOP  
SA  
D
SB  
Sample-and-hold systems  
Audio signal routing  
IN  
Video signal routing  
SWITCHES SHOWN FOR A LOGIC 0 INPUT.  
Communication systems  
Figure 2. 8-Lead MSOP Functional Block Diagram  
GENERAL DESCRIPTION  
Each switch conducts equally well in both directions when on  
and has an input signal range that extends to the supplies. In the  
off condition, signal levels up to the supplies are blocked. The  
ADG1419 exhibits break-before-make switching action for use  
in multiplexer applications.  
The ADG1419 is a monolithic iCMOS® device containing a  
single-pole/double-throw (SPDT) switch. An EN input on the  
LFCSP package is used to enable or disable the device. When  
disabled, all channels are switched off.  
The iCMOS (industrial CMOS) modular manufacturing process  
combines high voltage, complementary metal-oxide semiconductor  
(CMOS) and bipolar technologies. It enables the development  
of a wide range of high performance analog ICs capable of 33 V  
operation in a footprint that no other generation of high voltage  
parts has achieved. Unlike analog ICs using conventional CMOS  
processes, iCMOS components can tolerate high supply voltages  
while providing increased performance, dramatically lower  
power consumption, and reduced package size.  
PRODUCT HIGHLIGHTS  
1. 2.4 Ω maximum on resistance at 25°C.  
2. Minimum distortion.  
3. 3 V logic-compatible digital inputs: VINH = 2.0 V, VINL = 0.8 V.  
4. No VL logic power supply required.  
5. 8-lead MSOP and 8-lead, 3 mm × 2 mm LFCSP packages.  
The on resistance profile is very flat over the full analog input  
range ensuring excellent linearity and low distortion when  
switching audio signals. The iCMOS construction ensures  
ultralow power dissipation, making the part ideally suited  
for portable and battery-powered instruments.  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2009 Analog Devices, Inc. All rights reserved.  
 
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ADG1419BRMZ 替代型号

型号 品牌 替代类型 描述 数据表
ADG1419BRMZ-REEL7 ADI

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 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS S

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