Datasheet > ADG1212_15

ADG1212_15

更新时间： 2024-02-17 13:38:42

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
16页	330K
描述
Low Capacitance, Low Charge Injection

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ADG1212_15 数据手册

Low Capacitance, Low Charge Injection,

15 V/+12 V CMOS Quad SPST Switches

Data Sheet

ADG1211/ADG1212/ADG1213

FUNCTIONAL BLOCK DIAGRAM

FEATURES

1 pF off capacitance

IN1

IN2

IN3

IN4

IN1

IN2

IN3

IN4

IN1

IN2

IN3

IN4

2.6 pF on capacitance

<1 pC charge injection

33 V supply range

120 Ω on resistance

ADG1211

ADG1212

ADG1213

Fully specified at 15 V, +12 V

No V_Lsupply required

3 V logic-compatible inputs

Rail-to-rail operation

16-lead TSSOP and 16-lead LFCSP

Typical power consumption: <0.03 µW

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1.

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio signal routing

iCMOS construction ensures ultralow power dissipation,

making the parts ideally suited for portable and battery-

powered instruments.

Video signal routing

Communication systems

The ADG1211/ADG1212/ADG1213 contain four independent

single-pole/single-throw (SPST) switches. The ADG1211 and

ADG1212 differ only in that the digital control logic is inverted.

The ADG1211 switches are turned on with Logic 0 on the

appropriate control input, while Logic 1 is required for the

ADG1212. The ADG1213 has two switches with digital control

logic similar to that of the ADG1211; the logic is inverted on

the other two switches. The ADG1213 exhibits break-before-

make switching action for use in multiplexer applications.

GENERAL DESCRIPTION

The ADG1211/ADG1212/ADG1213 are monolithic complemen-

tary metal-oxide semiconductor (CMOS) devices containing

four independently selectable switches designed on an iCMOS®

(industrial CMOS) process. iCMOS is a modular manufacturing

process combining high voltage CMOS and bipolar technologies.

It enables the development of a wide range of high performance

analog ICs capable of 33 V operation in a footprint that no

previous generation of high voltage parts has been able to achieve.

Unlike analog ICs using conventional CMOS processes, iCMOS

components can tolerate high supply voltages while providing

increased performance, dramatically lower power consumption,

and reduced package size.

Each switch conducts equally well in both directions when on

and has an input signal range that extends to the supplies. In the

off condition, signal levels up to the supplies are blocked.

PRODUCT HIGHLIGHTS

1. Ultralow capacitance.

The ultralow capacitance and charge injection of these switches

make them ideal solutions for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

Fast switching speed coupled with high signal bandwidth make

the parts suitable for video signal switching.

2. <1 pC charge injection.

3. 3 V logic-compatible digital inputs: V_IH= 2.0 V, V _IL= 0.8 V.

4. No V_Llogic power supply required.

5. Ultralow power dissipation: <0.03 µW.

6. 16-lead TSSOP and 3 mm × 3 mm LFCSP packages.

Rev. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted byimplication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

www.analog.com

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与ADG1212_15相关器件

型号	品牌	获取价格	描述	数据表
ADG1212-EP	ADI	获取价格	Low Capacitance, Low Charge Injection
ADG1212SRU-EP-RL7	ADI	获取价格	Low Capacitance, Low Charge Injection
ADG1212SRUZ-EP-RL7	ADI	获取价格	Low Capacitance, Low Charge Injection, ±15 V/
ADG1212YCP	ADI	获取价格	1 pF Off Capacitance, 1 pC Charge Injection,
ADG1212YCPZ-500RL7	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1212YCPZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1212YRU	ADI	获取价格	1 pF Off Capacitance, 1 pC Charge Injection,
ADG1212YRUZ	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1212YRUZ-REEL	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1212YRUZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V

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