ADG1212-EP

更新时间： 2024-11-29 12:53:03

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
12页	276K
描述
Low Capacitance, Low Charge Injection

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数据手册

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ADG1212-EP 数据手册

Low Capacitance, Low Charge Injection,

± ±1 ꢀV/±ꢁ ꢀ iCMOS Quad SPST Switches

Enhanced Product

ADG±ꢁ±ꢁ-EP

FEATURES

FUNCTIONAL BLOCK DIAGRAM

1 pF off capacitance

IN1

2.6 pF on capacitance

<1 pC charge injection

33 V supply range

IN2

120 Ω on resistance

ADG1212-EP

Fully specified at 1ꢀ V, +12 V

No V_Lsupply required

3 V logic-compatible inputs

Rail-to-rail operation

16-lead TSSOP

IN3

IN4

Typical power consumption: <0.03 μW

NOTES

1. SWITCHES SHOWN ARE

FOR LOGIC 1 INPUT.

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications (AQEC

standard)

Military temperature range: −ꢀꢀ°C to +12ꢀ°C

Controlled manufacturing baseline

One assembly/test site

One fabrication site

Enhanced product change notification

Qualification data available on request

Figure 1.

The ultralow capacitance and charge injection of this switch

makes it an ideal solution for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

Fast switching speed coupled with high signal bandwidth makes

the part suitable for video signal switching.

iCMOS construction ensures ultralow power dissipation, making

the part ideally suited for portable and battery-powered instruments.

APPLICATIONS

The ADG1212-EP contains four independent single-pole/

single-throw (SPST) switches. Each switch conducts equally

well in both directions when on and has an input signal range

that extends to the supplies. In the off condition, signal levels up

to the supplies are blocked.

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio signal routing

Additional application and technical information can be found

in the ADG1212 data sheet.

Video signal routing

Communication systems

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

The ADG1212-EP is a monolithic complementary metal-oxide

semiconductor (CMOS) device containing four independently

selectable switches designed on an iCMOS® (industrial CMOS)

process. iCMOS is a modular manufacturing process combining

high voltage CMOS and bipolar technologies. It enables the

development of a wide range of high performance analog ICs

capable of 33 V operation in a footprint that no previous generation

of high voltage parts has been able to achieve. Unlike analog

ICs using conventional CMOS processes, iCMOS components

can tolerate high supply voltages while providing increased

performance, dramatically lower power consumption, and

reduced package size.

1. Ultralow capacitance.

2. <1 pC charge injection.

3. 3 V logic compatible digital inputs: V_IH= 2.0 V, V_IL= 0.8 V.

4. No V_Llogic power supply required.

5. Ultralow power dissipation: <0.03 μW.

6. 16-lead TSSOP package.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

12 3 4 5 6 7...12

中文翻译

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