5秒后页面跳转
捷配首页

Datasheet > 信号电路 > 复用器或开关> ADG1219BRJZ-R2
ADG1219BRJZ-R2 PDF预览

ADG1219BRJZ-R2

更新时间： 2024-01-16 03:24:22
品牌 Logo 应用领域
亚德诺 - ADI 复用器开关复用器或开关信号电路光电二极管输出元件
页数 文件大小 规格书
17页 306K
描述
Low Capacitance, Low Charge Injection, 【15 V/12 V iCMOS⑩ SPDT in SOT-23

阅读下载

中文翻译

获取价格

ADG1219BRJZ-R2 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：LSSOP, TSSOP8,.1针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.75
Is Samacsys：N模拟集成电路 - 其他类型：SPDT
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：2.9 mm负电源电压最大值（Vsup）：-16.5 V
负电源电压最小值（Vsup）：-13.5 V标称负供电电压 (Vsup)：-15 V
信道数量：1功能数量：1
端子数量：8标称断态隔离度：77 dB
通态电阻匹配规范：3.5 Ω最大通态电阻 (Ron)：270 Ω
最高工作温度：125 °C最低工作温度：-40 °C
输出：SEPARATE OUTPUT封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装等效代码：TSSOP8,.1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260电源：12/+-15 V
认证状态：Not Qualified座面最大高度：1.45 mm
子类别：Multiplexer or Switches最大供电电流 (Isup)：0.001 mA
最大供电电压 (Vsup)：16.5 V最小供电电压 (Vsup)：13.5 V
标称供电电压 (Vsup)：15 V表面贴装：YES
最长断开时间：170 ns最长接通时间：140 ns
切换：BREAK-BEFORE-MAKE技术：CMOS
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：1.6 mmBase Number Matches：1

ADG1219BRJZ-R2 数据手册

 浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第2页浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第3页浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第4页浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第5页浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第6页浏览型号ADG1219BRJZ-R2的Datasheet PDF文件第7页 
Low Capacitance, Low Charge Injection,  
± ±1 ꢀV±ꢁ ꢀ iCMOS™ SPDT in SOT-ꢁ3  
Preliminary Technical Data  
ADG±ꢁ±9  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
<0.5 pC charge injection over full signal range  
2.5 pF off capacitance  
ADG1219  
SA  
D
Low leakage; 0.6 nA maximum @ 85°C  
120 Ω on resistance  
SB  
DECODER  
Fully specified at +12 V, 15 V  
No VL supply required  
3 V logic-compatible inputs  
Rail-to-rail operation  
IN  
EN  
SWITCHES SHOWN FOR A LOGIC “0” INPUT  
8-lead SOT-23 package  
Figure 1.  
APPLICATIONS  
Automatic test equipment  
Data acquisition systems  
Battery-powered systems  
Sample-and-hold systems  
Audio/video signal routing  
Communication systems  
GENERAL DESCRIPTION  
minimum charge injection over the entire signal range of the  
device. iCMOS construction also ensures ultralow power  
dissipation, making the parts ideally suited for portable and  
battery-powered instruments.  
The ADG1219 is a monolithic iCMOS device containing an  
SPDT switch. An EN input is used to enable or disable the  
device. When disabled, all channels are switched off. When on,  
each channel conducts equally well in both directions and has  
an input signal range that extends to the supplies. Each switch  
exhibits break-before-make switching action.  
0.5  
T
= 25ºC  
A
0.4  
0.3  
V
V
= +15V  
= –15V  
DD  
SS  
The iCMOS (industrial CMOS) modular manufacturing  
process combines high voltage CMOS (complementary metal-  
oxide semiconductor) and bipolar technologies. It enables the  
development of a wide range of high performance analog ICs  
capable of 33 V operation in a footprint that no other generation  
of high voltage parts has been able to achieve. Unlike analog ICs  
using conventional CMOS processes, iCMOS components can  
tolerate high supply voltages while providing increased perfor-  
mance, dramatically lower power consumption, and reduced  
package size.  
0.2  
0.1  
0
V
V
= 12V  
= 0V  
DD  
SS  
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
V
V
= +5V  
= –5V  
DD  
SS  
–15  
–10  
–5  
0
5
10  
15  
The ultralow capacitance and exceptionally low charge injection  
of these multiplexers make them ideal solutions for data  
acquisition and sample-and-hold applications, where low glitch  
and fast settling are required. Figure 2 shows that there is  
INPUT VOLTAGE (V)  
Figure 2. Charge Injection vs. Input Voltage  
Rev. PrB  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2008 Analog Devices, Inc. All rights reserved.  
1234567...17

中文翻译

下载PDF

与ADG1219BRJZ-R2相关器件

型号 品牌 获取价格 描述 数据表
ADG1219BRJZ-REEL7 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 【15 V/
ADG1221 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS Dual SPST Switches
ADG1221BRMZ ADI

获取价格

 		Low Capacitance, Low Charge Injection, ±15 V
ADG1221BRMZ1 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS Dual SPST Switches
ADG1221BRMZ-REEL7 ADI

获取价格

 		Low Capacitance, Low Charge Injection, ±15 V
ADG1221BRMZ-REEL71 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS Dual SPST Switches
ADG1222 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS Dual SPST Switches
ADG1222BRMZ ADI

获取价格

 		Low Capacitance, Low Charge Injection, ±15 V
ADG1222BRMZ1 ADI

获取价格

 		Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS Dual SPST Switches
ADG1222BRMZ-REEL7 ADI

获取价格

 		Low Capacitance, Low Charge Injection, ±15 V

与ADG1219BRJZ-R2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证