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ABA-31563-TR2 PDF预览

ABA-31563-TR2

更新时间: 2024-11-18 13:05:19
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安捷伦 - AGILENT 放大器射频微波
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ABA-31563-TR2 数据手册

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Agilent ABA-31563  
3.5 GHz Broadband Silicon  
RFIC Amplifier  
Data Sheet  
Features  
• Operating Frequency DC ~ 3.5GHz  
• 21.5 dB Gain  
• VSWR < 2.0 throughout operating  
frequency  
• 2.2 dBm Output P1dB  
• 13.1 dBm Output IP3  
• 3.8 dB Noise Figure  
• Unconditionally Stable  
• Single 3V Supply (Id = 14 mA)  
• Lead-free  
Description  
Surface Mount Package  
SOT-363/SC70  
Agilent’s ABA-31563 is an  
economical, easy-to-use, inter-  
nally 50matched, silicon  
monolithic broadband amplifier  
that offers excellent gain and  
broadband response from DC to  
3.5 GHz. Packaged in an ultra-  
miniature SOT-363 package, it  
requires half the board space of  
a SOT-143 package.  
Applications  
• Amplifier for Cellular, Cordless,  
Special Mobile Radio, PCS, ISM,  
Wireless LAN, DBS, TVRO, and TV  
Tuner Applications  
Pin Connections and  
Package Marking  
At 2 GHz, the ABA-31563 offers  
a small-signal gain of 21.5 dB,  
output P1dB of 2.2 dBm and  
13.1 dBm output third order  
intercept point. It is suitable for  
use as wideband applications.  
They are designed for low cost  
gain blocks in cellular applica-  
tions, DBS tuners, LNB and other  
wireless communication systems.  
Output  
& Vcc  
GND 1  
GND 2  
Input  
GND 3  
Vcc  
Attention:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
ESD Machine Model (Class A)  
Note:  
Top View. Package marking provides orientation  
and identification. “x” is the date code.  
ESD Human Body Model (Class 1B)  
ABA-31563 is fabricated using  
Agilent’s HP25 silicon bipolar  
process, which employs a double-  
diffused single polysilicon  
process with self-aligned submi-  
cron emitter geometry. The  
process is capable of simulta-  
neous high fT and high NPN  
breakdown (25 GHz fT at 6V  
BVCEO). The process utilizes  
industry standard device oxide  
isolation technologies and  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
Simplified Schematic  
RF  
Output  
& Vcc  
Vcc  
RF  
Input  
Ground 2  
Ground 3  
submicron aluminum multilayer  
interconnect to achieve superior  
performance, high uniformity,  
and proven reliability.  
Ground 1  

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