ABA-32563

更新时间： 2024-11-21 03:17:23

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器
页数	文件大小	规格书
8页	105K
描述
2.5 GHz Broadband Silicon RFIC Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ABA-32563 数据手册

Agilent ABA-32563

2.5 GHz Broadband Silicon

RFIC Amplifier

Data Sheet

Features

• Operating Frequency DC ~ 2.5 GHz

• 19 dB Gain

• VSWR < 2.0 throughout operating

frequency

• 8.4 dBm Output P1dB

• 19.5 dBm Output IP3

• 3.5 dB Noise Figure

• Unconditionally Stable

• Single 3V Supply (Id = 37 mA)

• Lead-free

Description

Surface Mount Package

SOT-363/SC70

Agilent’s ABA-32563 is an

economical, easy-to-use, inter-

nally 50Ω matched, silicon

monolithic broadband amplifier

that offers excellent gain and

broadband response from DC to

2.5 GHz. Packaged in an ultra-

miniature SOT-363 package, it

requires half the board space of

a SOT-143 package.

Applications

• Amplifier for Cellular, Cordless,

Special Mobile Radio, PCS, ISM,

Wireless LAN, DBS, TVRO, and TV

Tuner Applications

Pin Connections and

Package Marking

At 2 GHz, the ABA-32563 offers

a small-signal gain of 19 dB,

output P1dB of 8.4 dBm and

19.5 dBm output third order

intercept point. It is suitable for

use as wideband applications.

They are designed for low cost

gain blocks in cellular applica-

tions, DBS tuners, LNB and other

wireless communication systems.

Output

& Vcc

GND 1

GND 2

Input

GND 3

Vcc

Attention:

Observe precautions for

handling electrostatic

sensitive devices.

ESD Machine Model (Class A)

Note:

Top View. Package marking provides orientation

and identification. “x” is the date code.

ESD Human Body Model (Class 1B)

ABA-32563 is fabricated using

Agilent’s HP25 silicon bipolar

process, which employs a double-

diffused single polysilicon

process with self-aligned submi-

cron emitter geometry. The

process is capable of simulta-

neous high f_Tand high NPN

breakdown (25 GHz f_Tat 6V

BVCEO). The process utilizes

industry standard device oxide

isolation technologies and

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

Simplified Schematic

Output

& Vcc

Vcc

Input

Ground 2

Ground 3

submicron aluminum multilayer

interconnect to achieve superior

performance, high uniformity,

and proven reliability.

Ground 1

12 3 4 5 6 7 8

中文翻译

下载PDF

与ABA-32563相关器件

型号	品牌	获取价格	描述	数据表
ABA-32563-BLK	AGILENT	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 2500MHz Max, 1 Func, BIPolar, SC-70, SOT-363, 6 P
ABA-32563-BLKG	AGILENT	获取价格	2.5 GHz Broadband Silicon RFIC Amplifier
ABA-32563-BLKG	AVAGO	获取价格	0MHz - 2500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, ULTRA MINI, SC-70, S
ABA-32563-TR1G	AGILENT	获取价格	2.5 GHz Broadband Silicon RFIC Amplifier
ABA-32563-TR1G	AVAGO	获取价格	0MHz - 2500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, ULTRA MINI, SC-70, S
ABA-32563-TR2G	AGILENT	获取价格	2.5 GHz Broadband Silicon RFIC Amplifier
ABA-32563-TR2G	AVAGO	获取价格	0MHz - 2500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, ULTRA MINI, SC-70, S
AB-A36DH99-FREQ	NEL	获取价格	PECL/LVPECL UHF VCXO
AB-A36DH9E-FREQ	NEL	获取价格	PECL/LVPECL UHF VCXO
AB-A36DH9F-FREQ	NEL	获取价格	PECL/LVPECL UHF VCXO

与ABA-32563相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

ABA-32563

ABA-32563 数据手册

与ABA-32563相关器件

与ABA-32563相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ABA-32563

ABA-32563 数据手册

与ABA-32563相关器件

与ABA-32563相关文章

您还可以找

您在本页遇到什么问题？