AA1L3N

更新时间： 2024-10-16 21:55:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
4页	93K
描述
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AA1L3N 数据手册

DATA SHEET

COMPOUND TRANSISTOR

AA1L3N

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 4.7 kΩ, R²= 10 kΩ)

•

Complementary transistor with AN1L3N

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

100

°C

200

250

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

V^CE= 5.0 V, I^C= 5.0 mA

V^CE= 5.0 V, I^C= 50 mA

I^C= 5.0 mA, I^B= 0.25 mA

V^CE= 5.0 V, I^C= 100 µA

V^CE= 0.2 V, I^C= 5.0 mA

230

0.05

0.9

1.5

4.7

100

−

DC current gain

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

0.2

0.6

3.0

3.29

kΩ

µs

6.11

E-to-B resistance

Turn-on time

R²

V^CC= 5 V, R^L= 1 kΩ

V^I= 5 V, PW = 2 µs

duty cycle≤2 %

t^on

0.2

5.0

6.0

Storage time

t^stg

Turn-off time

t^off

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16163EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

下载PDF

与AA1L3N相关器件

型号	品牌	获取价格	描述	数据表
AA1L3N-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
AA1L3Z	NEC	获取价格	NPN SILICON TRANSISTOR
AA1L3Z-A	RENESAS	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, SC-43B, 3 PIN
AA1L4L	NEC	获取价格	NPN SILICON TRANSISTOR
AA1L4L-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
AA1L4M	NEC	获取价格	NPN SILICON TRANSISTOR
AA1L4M-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
AA1L4Z	NEC	获取价格	COMPOUND TRANSISTOR
AA1L4Z-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
AA1L4Z-A	RENESAS	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, SC-43B, 3 PIN