Datasheet > A44

A44

更新时间： 2024-09-17 06:35:07

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	310K
描述
NPN Silicon Plastic-Encapsulate Transistor

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A44 数据手册

A44

NPN Silicon

Elektronische Bauelemente

Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

FEATURES

High voltage

* High Reliability

2 3

1. EMITTER

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

2. BASS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Value

400

Units

COLLECTOR

400

Emitter-Base Voltage

Collector Current -Continuous

0.2

Collector Dissipation

P_C

0.625

-55 to +150

℃

Junction and Storage Temperature

T_J, T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Ic= 100µA , I_E=0

I_C= 1 mA , I_B=0

I_E=100µA, I_C=0

V_CB=400 V, I_E=0

V_CE=400 V

400

0.1

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB= 4V, I_C=0

0.1

300

H_{FE (1)}

V_CE=10V , I_C=10 mA

V_CE=10V, I_C=1mA

V_CE=10V, I_C=100 mA

V_CE=10V, I_C=50 mA

I_C=10 mA, I_B=1mA

I_C=50 mA, I_B=5mA

H_FE(2)

DC current gain

H_FE(3)

H_FE(4)

V_CE(sat)

V_BE(sat)

0.2

0.3

Collector-emitter saturation voltage

Base-emitter sataration voltage

I_C=10 mA, I_B= 1 mA

V_CE=20V, I_C=10mA

0.75

Transition

frequency

f _T

MHz

f =30MHz

CLASSIFICATION OF hFE₍₁₎

Rank

Range

80-100

100-150

150-200

200-300

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

中文翻译

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