5秒后页面跳转
A43L0616BV-7UF PDF预览

A43L0616BV-7UF

更新时间: 2024-01-03 19:27:49
品牌 Logo 应用领域
联笙电子 - AMICC 存储内存集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
45页 1276K
描述
512K X 16 Bit X 2 Banks Synchronous DRAM

A43L0616BV-7UF 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:TSOP2, TSOP50,.46,32Reach Compliance Code:unknown
风险等级:5.73Is Samacsys:N
访问模式:DUAL BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):143 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G50长度:20.955 mm
内存密度:16777216 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:50
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:2048座面最大高度:1.2 mm
自我刷新:Yes连续突发长度:1,2,4,8,FP
最大待机电流:0.0007 A子类别:DRAMs
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

A43L0616BV-7UF 数据手册

 浏览型号A43L0616BV-7UF的Datasheet PDF文件第3页浏览型号A43L0616BV-7UF的Datasheet PDF文件第4页浏览型号A43L0616BV-7UF的Datasheet PDF文件第5页浏览型号A43L0616BV-7UF的Datasheet PDF文件第7页浏览型号A43L0616BV-7UF的Datasheet PDF文件第8页浏览型号A43L0616BV-7UF的Datasheet PDF文件第9页 
A43L0616B  
Decoupling Capacitance Guide Line  
Recommended decoupling capacitance added to power line at board.  
Parameter  
Symbol  
Value  
Unit  
µF  
Decoupling Capacitance between VDD and VSS  
Decoupling Capacitance between VDDQ and VSSQ  
CDC1  
CDC2  
0.1 + 0.01  
0.1 + 0.01  
µF  
Note: 1. VDD and VDDQ pins are separated each other.  
All VDD pins are connected in chip. All VDDQ pins are connected in chip.  
2. VSS and VSSQ pins are separated each other  
All VSS pins are connected in chip. All VSSQ pins are connected in chip.  
DC Electrical Characteristics  
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C or -40ºC to +85ºC)  
Speed  
CAS  
Symbol  
Parameter  
Test Conditions  
Unit Notes  
Latency  
-6  
-7  
Operating Current  
(One Bank Active)  
Burst Length = 1  
Icc1  
190  
160  
mA  
mA  
1
tRC tRC(min), tCC tCC(min), IOL = 0mA  
Icc2 P  
Precharge Standby  
Current in power-  
down mode  
CKE VIL(max), tCC = 15ns  
1
1
Icc2 PS  
CKL VIL(max), tCC = ∞  
CKE VIH(min), CS VIH(min), tCC = 15ns  
ICC2N  
Precharge Standby  
Current in non  
power-down mode  
15  
4
Input signals are changed one time during 30ns  
mA  
mA  
mA  
CKE VIH(min), CLK VIL(max), tCC = ∞  
Input signals are stable.  
ICC2NS  
ICC3 P  
Active Standby  
Current in power-  
down mode  
CKE VIL(max), tCC = 15ns  
CKE VIL(max) tCC = ∞  
2
1
ICC3 PS  
CKE VIH(min), CS VIH(min), tCC = 15ns  
Active Standby  
current in non  
power-down mode  
(One Bank Active)  
25  
15  
ICC3N  
Input signals are changed one time during 30ns  
CKE VIH(min), CLK VIL(max), tCC = ∞  
Input signals are stable.  
ICC3NS  
ICC4  
3
210  
-
180  
180  
180  
Operating Current  
(Burst Mode)  
IOL = 0mA, Page Burst  
mA  
1
2
All bank Activated, tCCD = tCCD (min)  
2
ICC5  
ICC6  
Refresh Current  
210  
mA  
mA  
tRC tRC (min)  
CKE 0.2V  
Self Refresh  
Current  
1
Note: 1. Measured with outputs open. Addresses are changed only one time during tCC(min).  
2. Refresh period is 32ms. Addresses are changed only one time during tCC(min).  
PRELIMINARY (May, 2005, Version 0.0)  
5
AMIC Technology, Corp.  

与A43L0616BV-7UF相关器件

型号 品牌 描述 获取价格 数据表
A43L0616G-75I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43L0616G-95I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43L0616V-75I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43L0616V-7I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43L0616V-95I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43L0632 AMICC 512K X 32 Bit X 2 Banks Synchronous DRAM

获取价格