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A43E16161G-75UF PDF预览

A43E16161G-75UF

更新时间: 2024-01-05 19:03:10
品牌 Logo 应用领域
联笙电子 - AMICC 时钟动态存储器内存集成电路
页数 文件大小 规格书
48页 557K
描述
Synchronous DRAM, 2MX16, 6ns, CMOS, PBGA54

A43E16161G-75UF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FBGA, BGA54,9X9,32Reach Compliance Code:unknown
风险等级:5.75最长访问时间:6 ns
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
内存密度:33554432 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16端子数量:54
字数:2097152 words字数代码:2000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA54,9X9,32封装形状:SQUARE
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:4096
连续突发长度:1,2,4,8,FP最大待机电流:0.00001 A
子类别:DRAMs最大压摆率:0.06 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

A43E16161G-75UF 数据手册

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A43E16161  
Absolute Maximum Ratings*  
*Comments  
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V  
Voltage on VDD supply relative to VSS (VDD, VDDQ )  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 2.6V  
Storage Temperature (TSTG) . . . . . . . . . . -55°C to +150°C  
Soldering Temperature X Time (TSLODER) . . . . . . . . . . . . . .  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec  
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W  
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA  
Permanent device damage may occur if “Absolute  
Maximum Ratings” are exceeded.  
Functional operation should be restricted to recommended  
operating condition.  
Exposure to higher than recommended voltage for  
extended periods of time could affect device reliability.  
Capacitance (TA=25°C, f=1MHz)  
Parameter  
Input Capacitance  
Symbol  
CI1  
Condition  
Min  
2.0  
2.0  
3.5  
Max  
4.0  
4.0  
6.0  
Unit  
pF  
A0 to A10, BA  
CI2  
CLK, CKE,  
,
,
, WE , DQM  
pF  
CS RAS CAS  
Data Input/Output Capacitance  
CI/O  
DQ0 to DQ31  
pF  
DC Electrical Characteristics  
Recommend operating conditions  
(Voltage referenced to VSS=0V, TA = 0ºC to +70ºC for commercial or TA =-40ºC to +85ºC for extended)  
Parameter  
Supply Voltage  
Symbol  
VDD  
VDDQ  
VIH  
Min  
Typ  
Max  
Unit  
V
Note  
1.7  
1.8  
1.95  
DQ Supply Voltage  
Input High Voltage  
1.7  
1.8  
1.95  
V
0.8*VDDQ  
-
-
-
-
-
-
VDDQ+0.3  
V
Input Low Voltage  
VIL  
-0.3  
0.3  
-
V
Note 1  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
Output Leakage Current  
Output Loading Condition  
VOH  
VDDQ - 0.2  
V
IOH = -0.1mA  
IOL = 0.1mA  
Note 2  
VOL  
-
0.2  
1
V
IIL  
-1  
μA  
μA  
IOL  
-1.5  
1.5  
Note 3  
See Fig. 1 (Page 6)  
Note: 1. VIL (min) = -1.5V AC (pulse width 5ns).  
2. Any input 0V VIN VDD + 0.3V, all other pins are not under test = 0V  
3. Dout is disabled, 0V Vout VDD  
PRELIMINARY (February, 2008, Version 0.3)  
4
AMIC Technology, Corp.  

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