5秒后页面跳转
A43E16161G-75UF PDF预览

A43E16161G-75UF

更新时间: 2024-01-05 18:22:26
品牌 Logo 应用领域
联笙电子 - AMICC 时钟动态存储器内存集成电路
页数 文件大小 规格书
48页 557K
描述
Synchronous DRAM, 2MX16, 6ns, CMOS, PBGA54

A43E16161G-75UF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FBGA, BGA54,9X9,32Reach Compliance Code:unknown
风险等级:5.75最长访问时间:6 ns
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
内存密度:33554432 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16端子数量:54
字数:2097152 words字数代码:2000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA54,9X9,32封装形状:SQUARE
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:4096
连续突发长度:1,2,4,8,FP最大待机电流:0.00001 A
子类别:DRAMs最大压摆率:0.06 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

A43E16161G-75UF 数据手册

 浏览型号A43E16161G-75UF的Datasheet PDF文件第4页浏览型号A43E16161G-75UF的Datasheet PDF文件第5页浏览型号A43E16161G-75UF的Datasheet PDF文件第6页浏览型号A43E16161G-75UF的Datasheet PDF文件第8页浏览型号A43E16161G-75UF的Datasheet PDF文件第9页浏览型号A43E16161G-75UF的Datasheet PDF文件第10页 
A43E16161  
AC Operating Test Conditions  
(VDD = 1.7V~1.95V, TA = 0ºC to +70ºC for commercial or TA =-40ºC to +85ºC for extended)  
Parameter  
Value  
Unit  
V
AC input levels  
0.9 x VDDQ/0.2  
0.5 x VDDQ  
tr/tf = 1/1  
Input timing measurement reference level  
Input rise and all time (See note3)  
Output timing measurement reference level  
Output load condition  
V
ns  
V
0.5 x VDDQ  
See Fig.2  
1.8V  
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA  
13.9KΩ VOL(DC) = 0.2V, IOL = 0.1mA  
VTT =0.5V x VDDQ  
50Ω  
Output  
ZO=50Ω  
OUTPUT  
30pF  
10.6KΩ  
30pF  
(Fig. 2) AC Output Load Circuit  
(Fig. 1) DC Output Load Circuit  
AC Characteristics  
(AC operating conditions unless otherwise noted)  
-75  
-95  
Symbol  
Parameter  
Unit  
Note  
Min  
7.5  
12  
-
Max  
Min  
Max  
CL=3  
CL=2  
CL=3  
CL=2  
9.5  
15  
-
tCC  
CLK cycle time  
1000  
1000  
ns  
1
6
8
-
7
9
-
CLK to valid  
Output delay  
tSAC  
tOH  
tCH  
ns  
ns  
ns  
1,2  
2
-
-
Output data hold time  
2
2
3
3
3
3
2
2
1
1
-
CL=3  
CL=2  
CL=3  
CL=2  
CL=3  
CL=2  
2.5  
2.5  
2.5  
2.5  
2
-
-
CLK high pulse width  
3
-
-
-
-
tCL  
tSS  
CLK low pulse width  
Input setup time  
ns  
ns  
3
3
-
-
-
-
2
-
-
tSH  
Input hold time  
1
-
-
ns  
ns  
3
2
tSLZ  
CLK to output in Low-Z  
1
-
-
CL=3  
CL=2  
-
6
8
7
8
tSHZ  
CLK to output in Hi-Z  
ns  
-
-
CL=CAS Latency.  
*All AC parameters are measured from half to half.  
Note : 1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf) = 1ns.  
If tr & tf is longer than 1ns, transient time compensation should be considered,  
i.e., [(tr + tf)/2-1]ns should be added to the parameter.  
PRELIMINARY (February, 2008, Version 0.3)  
6
AMIC Technology, Corp.  

与A43E16161G-75UF相关器件

型号 品牌 描述 获取价格 数据表
A43E16161G-95F AMICC Synchronous DRAM, 2MX16, 7ns, CMOS, PBGA54

获取价格

A43E16161G-95UF AMICC Synchronous DRAM, 2MX16, 7ns, CMOS, PBGA54

获取价格

A43E16161V AMICC 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM

获取价格

A43E16161V-75F AMICC 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM

获取价格

A43E16161V-75UF AMICC 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM

获取价格

A43E16161V-95F AMICC 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM

获取价格