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A32400DX-1PQG240I PDF预览

A32400DX-1PQG240I

更新时间: 2024-02-08 07:58:19
品牌 Logo 应用领域
ACTEL 可编程逻辑
页数 文件大小 规格书
22页 207K
描述
Field Programmable Gate Array, 2526 CLBs, 40000 Gates, CMOS, PQFP240, PLASTIC, QFP-240

A32400DX-1PQG240I 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:PLASTIC, QFP-240Reach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
JESD-30 代码:S-PQFP-G240JESD-609代码:e3
长度:32 mm湿度敏感等级:3
可配置逻辑块数量:2526等效关口数量:40000
端子数量:240最高工作温度:85 °C
最低工作温度:-40 °C组织:2526 CLBS, 40000 GATES
封装主体材料:PLASTIC/EPOXY封装代码:FQFP
封装形状:SQUARE封装形式:FLATPACK, FINE PITCH
峰值回流温度(摄氏度):245可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY
认证状态:Not Qualified座面最大高度:4.1 mm
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:32 mm
Base Number Matches:1

A32400DX-1PQG240I 数据手册

 浏览型号A32400DX-1PQG240I的Datasheet PDF文件第2页浏览型号A32400DX-1PQG240I的Datasheet PDF文件第3页浏览型号A32400DX-1PQG240I的Datasheet PDF文件第4页浏览型号A32400DX-1PQG240I的Datasheet PDF文件第6页浏览型号A32400DX-1PQG240I的Datasheet PDF文件第7页浏览型号A32400DX-1PQG240I的Datasheet PDF文件第8页 
3 2 0 0 D X F i e l d P r o g r a m m a b l e G a t e A r r a y s – T h e S y s t e m L o g i c I n t e g r a t o r ™ F a m i l y  
analogous to the wide-input AND term in a CPLD or PAL  
device. The output of the D-module has a programmable  
inverter for active HIGH or LOW assertion. The D-module  
output is hardwired to an output pin or can be fed back into  
the array to be incorporated into other logic.  
7 inputs  
Du a l-P o r t S R AM Mo d u le s  
hardwire to I/O  
The 3200DX dual-port SRAM modules have been optimized  
for synchronous or asynchronous applications. The SRAM  
modules are arranged in 256 bit blocks which can be  
configured as 32 x 8 or 64 x 4 (refer to Table 1 for the number  
of SRAM modules within a particular device). The SRAM  
module block structure allows them to be cascaded together  
to form user-definable memory spaces. Resources within the  
3200DX architecture allow the SRAM modules to be  
cascaded together without incurring an additional delay  
penalty. A block diagram of the 3200DX dual-port SRAM  
block is shown in Figure 4.  
Programmable  
inverter  
feedback to array  
Figure 3 D-Module Implementation  
and read ports of the SRAM block have eight data inputs  
(WD[7:0]) and eight outputs (RD[7:0]). The SRAM block  
outputs are connected to segmented vertical routing tracks.  
The 3200DX SRAM blocks are true dual-port structures  
containing independent READ and WRITE logic. The  
SRAM blocks contain six bits of read and write addressing  
(RDAD[5:0] and WRAD[5:0] respectively) for 64x4 bit  
blocks. When configured in byte mode, the highest order  
address bits (RDAD5 and WRAD5) are not used. The read  
and write ports of the SRAM blocks contain independent  
clocks (RCLK and WCLK) with programmable polarities  
offering active HIGH or LOW implementation. The write  
The 3200DX dual-port SRAM blocks are ideal for  
high-speed buffered applications such as DMA controllers  
and FIFO and LIFO queues. Actel’s ACTgen Macro Builder  
provides the capability to quickly design memory elements,  
such as FIFOs, LIFOs, and RAM arrays which can be  
included in any 3200DX design. Additionally, unused SRAM  
blocks can be used to implement registers for other logic  
within the design.  
WD[7:0]  
Latches  
[7:0]  
[5:0]  
RDAD[5:0]  
SRAM Module  
32 x 8 or 64 x 4  
Latches  
Read  
Port  
Logic  
Write  
Port  
Logic  
(256 bits)  
WRAD[5:0]  
[5:0]  
LEN  
REN  
Read  
Logic  
Latches  
RCLK  
MODE  
BLKEN  
WEN  
RD[7:0]  
Write  
Logic  
Routing Tracks  
WCLK  
Figure 4 Dual-Port SRAM Module  
5
 

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