A1015
-0.15A , -50V
PNP Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
ꢀ
Power Dissipation
G
H
1Emitter
2Collector
3Base
J
B
CLASSIFICATION OF hFE
A
D
Millimeter
Product-Rank
A1015-O
A1015-Y
120~240
A1015-GR
200~400
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
A
B
C
D
E
F
Range
70~140
K
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
-50
V
V
-50
-5
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
-150
mA
mW
°C
PD
400
TJ, TSTG
125, -55~125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-50
-50
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC= -100µA, IE=0
IC= -0.1mA, IB=0
IE= -100µA, IC=0
VCB= -50V, IE=0
-
-
V
-0.1
-0.1
-0.1
400
-0.3
-1.1
-
µA
µA
µA
Collector Cut-Off Current
ICEO
-
VCE= -50V, IB=0
Emitter Cut-Off Current
IEBO
-
VEB= -5V, IC=0
DC Current Gain
hFE
70
-
VCE= -6V, IC= -2mA
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
V
V
-
80
-
MHz VCE= -10V, IC= -1mA, f=30MHz
Collector Output Capacitance
Cob
7
pF
VCB= -10V, IE=0, f=1MHz
VCE= -6V, IC= -0.1mA, f=1KHz,
RG=10K
Noise Figure
NF
-
-
6
dB
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
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