Datasheet > A1015LT1-SOT-23

A1015LT1-SOT-23

更新时间： 2022-09-27 11:01:03

品牌	Logo	应用领域
JCST		晶体晶体管
页数	文件大小	规格书
2页	128K
描述
TRANSISTOR（ PNP ）

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数据手册

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A1015LT1-SOT-23 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

SOT— 23

1. BASE

A1015LT1

TRANSISTOR（ PNP ）

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

P_CM

Collector current

I_CM

0.2

-0.15

W（Tamb=25℃）

2.4

1.3

Collector-base voltage

V_(BR)CBO: -50

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150

Unit : mm

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= -100μA， I_E=0

Ic= -0.1mA， I_B=0

I_E= -10μA， I_C=0

(BR)CBO

(BR)CEO

V(BR)_EBO

I_CBO

I_CEO

V_CB=-50 V , I_E=0

-0.1

400

-0.3

-1.1

μA

Collector cut-off current

V_CE= -50 V , I_B=0

V_EB=- 5V , I_C=0

Emitter cut-off current

I_EBO

DC current gain

H_FE(1)

V_CE=-6V, I_C= -2mA

I_C=-100 mA, I_B= -10mA

130

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-10V, I = -1mA

Transition frequency

f_T

MHz

f=30MHz

CLASSIFICATION OF H

FE(1)

Rank

Range

130-200

200-400

MARKING

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