Datasheet > A1015GR(TO-92)

A1015GR(TO-92)

更新时间： 2022-12-01 23:02:33

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A1015GR(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

A1015 TRANSISTOR (PNP)

TO-92

1.EMITTER

2.COLLECTOR

3.BASE

FEATURES

Power dissipation

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-50

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-50

-5

-150

400

P_D

T_j

125

℃

T_stg

-55-125

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -100μA, I_E=0

I_C= -0. 1mA, I_B=0

I_E= -100μA, I_C=0

V_CB= -50V,I_E=0

-50

-5

-0.1

400

-0.3

-1.1

μA

Collector cut-off current

I_CEO

V_CE= -50V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE= -6V, I_C= -2mA

I_C= -100mA, I_B= -10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE= -10 V, I_C= -1mA

f =30MHz

Transition frequency

Collector Output Capacitance

Noise Figure

f_T

MHz

Cob

V_CB=-10V,I_E=0,f=1MHZ

V_CE= -6 V, I_C= -0.1mA,

f =1KHz,R_G=10K

CLASSIFICATION OF h_FE

Rank

200-400

Range

70-140

120-240

A,May,2011

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