生命周期: | Transferred | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.08 | 其他特性: | RADIATION HARDENED |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 38 A |
最大漏源导通电阻: | 0.055 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AE | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 70 A |
认证状态: | Not Qualified | 参考标准: | MILITARY STANDARD (USA) |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6764E3 | MICROSEMI | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me |
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2N6764SCC5205/013 | INFINEON | Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
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2N6764SCC5205/013PBF | INFINEON | Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
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2N6764TXV | MICROSEMI | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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2N6765 | FAIRCHILD | N-Channel Power MOSFETs, 30A, 150V/200V |
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2N6765 | IXYS | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series |
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