生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.26 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 14 A | 认证状态: | Not Qualified |
参考标准: | MILITARY STANDARD (USA) | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6790E | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6790EA | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6790EAPBF | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6790EB | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6790EC | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6790ED | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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