是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, TO-205AF, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 4.3 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 8 A | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.195 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 参考标准: | MILITARY STANDARD (USA) |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFF130 | INFINEON |
完全替代 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF130 with Hermetic Packag | |
JANTXV2N6796 | INFINEON |
完全替代 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6796_03 | SEME-LAB |
获取价格 |
TMOS FET ENHANCEMENT N - CHANNEL | |
2N6796_10 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET | |
2N6796E | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796E3 | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal- | |
2N6796EAPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796EB | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796EBPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796EC | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796EDPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2N6796LCC4 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET |