5秒后页面跳转
2N6796 PDF预览

2N6796

更新时间: 2024-11-25 14:51:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 865K
描述
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6796 with Hermetic Packaging

2N6796 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, TO-205AF, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):4.3 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.195 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified参考标准:MILITARY STANDARD (USA)
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N6796 数据手册

 浏览型号2N6796的Datasheet PDF文件第2页浏览型号2N6796的Datasheet PDF文件第3页浏览型号2N6796的Datasheet PDF文件第4页浏览型号2N6796的Datasheet PDF文件第5页浏览型号2N6796的Datasheet PDF文件第6页浏览型号2N6796的Datasheet PDF文件第7页 
PD-90430D  
IRFF130  
JANTX2N6796  
JANTXV2N6796  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTORS  
100V, N-CHANNEL  
REF: MIL-PRF-19500/557  
THRU-HOLE TO-205AF (TO-39)  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFF130  
100V  
8.0A  
0.18  
Description  
Features  
The HEXFET® technology is the key to International  
Rectifier’s HiRel advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on state  
resistance combined with high trans conductance.  
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
The HEXFET transistors also feature all of the well  
established advantages of MOSFETs such as voltage  
control, very fast switching and temperature stability of the  
electrical parameters.  
They are well suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifiers  
and high energy pulse circuits.  
Absolute Maximum Ratings  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current  
8.0  
A
5.0  
32  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
25  
0.20  
± 20  
75  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
mJ  
A
IAR  
EAR  
Avalanche Current   
8.0  
2.5  
5.5  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
dv/dt  
TJ  
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
Weight  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
0.98 (Typical)  
For Footnotes, refer to the page 2.  
1
2018-11-20  
International Rectifier HiRel Products, Inc.  

2N6796 替代型号

型号 品牌 替代类型 描述 数据表
IRFF130 INFINEON

完全替代

100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF130 with Hermetic Packag
JANTXV2N6796 INFINEON

完全替代

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)

与2N6796相关器件

型号 品牌 获取价格 描述 数据表
2N6796_03 SEME-LAB

获取价格

TMOS FET ENHANCEMENT N - CHANNEL
2N6796_10 MICROSEMI

获取价格

N-CHANNEL MOSFET
2N6796E INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796E3 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-
2N6796EAPBF INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796EB INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796EBPBF INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796EC INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796EDPBF INFINEON

获取价格

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
2N6796LCC4 SEME-LAB

获取价格

N-CHANNEL POWER MOSFET