Datasheet > 935322369178

935322369178

更新时间： 2024-11-08 21:17:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	430K
描述
RF Power Field-Effect Transistor

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935322369178 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

935322369178 数据手册

Document Number: MMRF1023HS

Rev. 0, 4/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

MMRF1023HS

N--Channel Enhancement--Mode Lateral MOSFET

This 66 W asymmetrical Doherty RF power LDMOS transistor is optimized for

instantaneous signal bandwidth capabilities covering the frequency range of

2300 to 2400 MHz. This part is ideally suited for commercial and defense

communications and electronic warfare applications, such as an IED jammer.

2300–2400 MHz, 66 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

2300 MHz

•

Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 750 mA, V_GSB= 0.7 Vdc, P_out= 66 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

2300 MHz

2350 MHz

2400 MHz

(dB)

14.9

15.1

(%)

46.7

46.5

46.4

7.8

7.5

–34.0

–35.6

–34.6

NI--1230S--4L2L

Features

•

Advanced high performance in--package Doherty

Greater negative gate--source voltage range for improved Class C operation

Designed for digital predistortion error correction systems

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 3 and pin 6.

MMRF1023HS

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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