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934056886127 PDF预览

934056886127

更新时间: 2024-11-21 19:46:27
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 263K
描述
TRANSISTOR 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

934056886127 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
雪崩能效等级(Eas):211 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056886127 数据手册

 浏览型号934056886127的Datasheet PDF文件第2页浏览型号934056886127的Datasheet PDF文件第3页浏览型号934056886127的Datasheet PDF文件第4页浏览型号934056886127的Datasheet PDF文件第5页浏览型号934056886127的Datasheet PDF文件第6页浏览型号934056886127的Datasheet PDF文件第7页 
PHP83N06T  
TrenchMOS™ Standard Level FET  
Rev. 01 — 11 January 2002  
Product data  
M3D307  
1. Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™1 technology, featuring very low on-state resistance.  
Product availability:  
PHP83N06T in SOT78 (TO-220AB).  
2. Features  
TrenchMOS™ technology  
Fast switching  
Low on-state resistance.  
3. Applications  
Switch mode power supplies  
Uninterruptible power supplies  
General purpose switching.  
4. Pinning information  
Table 1: Pinning - SOT78, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
d
s
mb  
2
drain (d)  
3
source (s)  
g
mb  
mounting base;  
connected to drain (d)  
MBB076  
MBK106  
1
2 3  
SOT78 (TO-220AB)  
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.  

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