Datasheet > 934056979127

934056979127

更新时间： 2024-11-21 21:14:35

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
15页	226K
描述
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TO-220, 5 PIN

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934056979127 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T5
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.76	雪崩能效等级（Eas）：	460 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	55 V	最大漏极电流 (ID)：	75 A
最大漏源导通电阻：	0.007 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T5	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	560 A	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

934056979127 数据手册

BUK7907-55ATE

N-channel TrenchPLUS standard level FET

Rev. 03 — 9 February 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS diodes for

ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been

designed and qualified to the appropriate AEC standard for use in automotive critical

applications.

1.2 Features and benefits

Allows responsive temperature

monitoring due to integrated

temperature sensor

Electrostatically robust due to

integrated protection diodes

Low conduction losses due to low

Q101 compliant

on-state resistance

1.3 Applications

12 V and 24 V high power motor

Electrical Power Assisted Steering

drives

(EPAS)

Automotive and general purpose

Protected drive for lamps

power switching

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

T_j≥ 25 °C; T_j≤ 175 °C

drain current

V_GS= 10 V; T_mb= 25 °C; see Figure 2; see Figure 3 [1] -

140

272

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 1

-55

175 °C

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 50 A; T_j= 175 °C; see Figure 7;

see Figure 8

mΩ

V_GS= 10 V; I_D= 50 A; T_j= 25 °C; see Figure 7;

5.8

mΩ

see Figure 8

S_F(TSD)temperature sense diode I_F= 250 µA; T_j> -55 °C; T_j< 175 °C

temperature coefficient

-1.4 -1.54 -1.68 mV/K

648 658 668 mV

V_F(TSD)temperature sense diode I_F= 250 µA; T_j= 25 °C

forward voltage

[1] Current is limited by power dissipation chip rating.

12 3 4 5 6 7...15

中文翻译

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与934056979127相关器件

型号	品牌	获取价格	描述	数据表
934056983115	NXP	获取价格	DIODE 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, PLASTIC, SMD, UMT5, SC-88A, 5 P
934056984115	NXP	获取价格	DIODE 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, PLASTIC, SMD, UMT5, SC-88A, 5 P
934056996215	NXP	获取价格	385mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN
934056997215	NXP	获取价格	475mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN
934057009115	NXP	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP
934057025127	NXP	获取价格	TRANSISTOR 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46,
934057029118	NXP	获取价格	TRANSISTOR 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63,
934057040127	NXP	获取价格	75A, 60V, 0.0036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
934057052116	NXP	获取价格	Logic level four-quadrant triac
934057052126	NXP	获取价格	Logic level four-quadrant triac

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