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934056925112 PDF预览

934056925112

更新时间: 2024-11-25 21:22:27
品牌 Logo 应用领域
恩智浦 - NXP 局域网放大器晶体管
页数 文件大小 规格书
12页 82K
描述
TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power

934056925112 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:75 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

934056925112 数据手册

 浏览型号934056925112的Datasheet PDF文件第2页浏览型号934056925112的Datasheet PDF文件第3页浏览型号934056925112的Datasheet PDF文件第4页浏览型号934056925112的Datasheet PDF文件第5页浏览型号934056925112的Datasheet PDF文件第6页浏览型号934056925112的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BLL1214-250  
L-band radar LDMOS transistor  
Product specification  
2002 Aug 06  
Supersedes data of 2002 Feb 05  

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