Datasheet > 934056313115

934056313115

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	57K
描述
Zener Diode, 12V V(Z), 5%, 0.35W, Silicon, Unidirectional

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934056313115 数据手册

Philips Semiconductors

Product speciﬁcation

Voltage regulator double diodes

BZB784 series

FEATURES

PINNING SOT323 (SC-70)

• Total power dissipation: max. 350 mW

• Approx. 5% V_Ztolerance

DESCRIPTION

cathode

• Working voltage range: nom. 2.4 to 15 V (E24 range).

cathode

common anode

APPLICATIONS

• General regulation functions

• ESD and surge protection.

handbook, halfpage

DESCRIPTION

Low-power voltage regulator diodes in a small SOT323

(SC-70) package.

MAM407

Top view

Fig.1 Simplified outline and symbol.

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BZB784-C2V4

BZB784-C2V7

BZB784-C3V0

BZB784-C3V3

BZB784-C3V6

BZB784-C3V9

BZB784-C4V3

BZB784-C4V7

BZB784-C5V1

BZB784-C5V6

BZB784-C6V2

BZB784-C6V8

BZB784-C7V5

BZB784-C8V2

BZB784-C9V1

BZB784-C10

BZB784-C11

BZB784-C12

BZB784-C13

BZB784-C15

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

200

UNIT

I_F

continuous forward current

−

I_ZSM

non-repetitive peak reverse current

t_p= 100 µs; square wave;

see Table 1

T_amb= 25 °C; prior to surge

P_tot

total power dissipation; note 1

T_amb= 25 °C; 2 diodes loaded

−

350

180

T_amb= 25 °C; 1 diode loaded

P_ZSM

non-repetitive peak reverse

dissipation

t_p= 100 µs; square wave;

T_amb= 25 °C; prior to surge

T_stg

T_j

storage temperature

junction temperature

−65

+150

150

°C

−

Note

1. Device mounted on an FR4 printed-circuit board.

2001 Feb 27

123 4 5 6 7 8

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